Formation and Characterization of Silicon Self-assembled Nanodots

Journal Article · Wed May 25 00:00:00 EDT 2011 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3587011· OSTI ID:21513230

Idrees, Fatima Aldaw; Sakrani, Samsudi; Othaman, Zulkafli ^[1]

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1. Physics Dept, Faculty of Science, Universiti Teknologi Malaysia, 81310 UTM Skudai, Johor Bahru (Malaysia)

Silicon self-assembled quantum dots have been successfully prepared on corning glass (7059) substrate. The samples were fabricated using the common technique RF magnetron sputtering system depend on plasma excitation at varying growth parameters and high temperature of more than 500 deg. C. The measurements of average dots size estimated to be 36 nm is confirmed by using AFM. The PL peak located at 570 nm, informed band gap energy = 2.10 eV larger than bulk material band gap, that confirmed the miniaturized of the dots. To measure the Silicon atomic% deposit on corning glass (7059) substrate EDX has been used.

• OSTI ID: 21513230
• Journal Information: AIP Conference Proceedings, Vol. 1341, Issue 1; Conference: Escinano2010: 2010 international conference on enabling science and nanotechnology, Kuala Lumpur (Malaysia), 1-3 Dec 2010; Other Information: DOI: 10.1063/1.3587011; (c) 2011 American Institute of Physics; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
36 MATERIALS SCIENCE
ATOMIC FORCE MICROSCOPY
DIFFUSION
EXCITATION
GLASS
MAGNETRONS
PEAKS
PHOTOLUMINESCENCE
PLASMA
QUANTUM DOTS
SILICON
SUBSTRATES
VITRIFICATION
ELECTRON TUBES
ELECTRONIC EQUIPMENT
ELEMENTS
EMISSION
ENERGY-LEVEL TRANSITIONS
EQUIPMENT
LUMINESCENCE
MICROSCOPY
MICROWAVE EQUIPMENT
MICROWAVE TUBES
NANOSTRUCTURES
PHOTON EMISSION
SEMIMETALS