A Time-Dependent SPICE Model for Single Electron Box and Its Application to Logic Gates at Low and High Temperatures
- Department of Electrical and Computer Engineering, Shahid Beheshti University, Velanjak, Tehran (Iran, Islamic Republic of)
- Science and Research Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of)
In this paper, for the first time, a circuit model for single electron box (SEB) is introduced. The main feature of the proposed model is mapping the master equation, which explains the behavior of a single electron device, to a novel circuit model. The proposed model can be utilized in a circuit simulator such as SPICE. The proposed circuit model is a time dependent model which can be used in order to calculate the intrinsic time latency of the SEB. In addition, it is able to calculate the operation of a gate circuit in high temperatures. The correct operation of the proposed model is studied by utilizing the model for simulating two digital logic gates based on the SEB. The obtained results are compared with SIMON.
- OSTI ID:
- 21513225
- Journal Information:
- AIP Conference Proceedings, Vol. 1341, Issue 1; Conference: Escinano2010: 2010 international conference on enabling science and nanotechnology, Kuala Lumpur (Malaysia), 1-3 Dec 2010; Other Information: DOI: 10.1063/1.3586974; (c) 2011 American Institute of Physics; ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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