Anomalous Charge Transport in Disordered Organic Semiconductors

Journal Article · Wed Mar 30 00:00:00 EDT 2011 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3573683· OSTI ID:21511557

Muniandy, S V; Woon, K L ^[1]; Choo, K Y ^[2]

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1. Department of Physics, University of Malaya, 50603 Kuala Lumpur (Malaysia)
2. Faculty of Engineering, Multimedia University, 63100 Cyberjaya, Selangor (Malaysia)

Anomalous charge carrier transport in disordered organic semiconductors is studied using fractional differential equations. The connection between index of fractional derivative and dispersion exponent is examined from the perspective of fractional Fokker-Planck equation and its link to the continuous time random walk formalism. The fractional model is used to describe the bi-scaling power-laws observed in the time-of flight photo-current transient data for two different types of organic semiconductors.

• OSTI ID: 21511557
• Journal Information: AIP Conference Proceedings, Vol. 1328, Issue 1; Conference: PERFIK-2010: Malaysia annual physics conference 2010, Damai Laut (Malaysia), 27-30 Oct 2010; Other Information: DOI: 10.1063/1.3573683; (c) 2011 American Institute of Physics; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHARGE CARRIERS
CHARGE TRANSPORT
DISPERSIONS
FOKKER-PLANCK EQUATION
GRAPH THEORY
INTEGRATED CIRCUITS
ORGANIC SEMICONDUCTORS
POLYMERS
RANDOMNESS
SCALING
TIME-OF-FLIGHT METHOD
TRANSIENTS
DIFFERENTIAL EQUATIONS
ELECTRONIC CIRCUITS
EQUATIONS
MATERIALS
MATHEMATICS
MICROELECTRONIC CIRCUITS
PARTIAL DIFFERENTIAL EQUATIONS
SEMICONDUCTOR MATERIALS