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Title: Zinc Oxide Thin Films Fabricated with Direct Current Magnetron Sputtering Deposition Technique

Abstract

Zinc oxide (ZnO) is a very promising material for emerging large area electronic applications including thin-film sensors, transistors and solar cells. We fabricated ZnO thin films by employing direct current (DC) magnetron sputtering deposition technique. ZnO films with different thicknesses ranging from 100 nm to 1020 nm were deposited on silicon (Si) substrate. The deposition pressure was varied from 12 mTorr to 25 mTorr. The influences of the film thickness and the deposition pressure on structural properties of the ZnO films were investigated using Mahr surface profilometer and atomic force microscopy (AFM). The experimental results reveal that the film thickness and the deposition pressure play significant role in the structural formation of the deposited ZnO thin films. ZnO films deposited on Si substrates are promising for variety of thin-film sensor applications.

Authors:
; ; ;  [1]
  1. Centre for Advanced Devices and Systems (CADS), Faculty of Engineering, Multimedia University, Selangor Darul Ehsan (Malaysia)
Publication Date:
OSTI Identifier:
21511542
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 1328; Journal Issue: 1; Conference: PERFIK-2010: Malaysia annual physics conference 2010, Damai Laut (Malaysia), 27-30 Oct 2010; Other Information: DOI: 10.1063/1.3573740; (c) 2011 American Institute of Physics; Journal ID: ISSN 0094-243X
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ATOMIC FORCE MICROSCOPY; DEPOSITION; DIRECT CURRENT; MAGNETRONS; SENSORS; SILICON; SOLAR CELLS; SPUTTERING; SUBSTRATES; SURFACES; THICKNESS; THIN FILMS; ZINC OXIDES; CHALCOGENIDES; CURRENTS; DIMENSIONS; DIRECT ENERGY CONVERTERS; ELECTRIC CURRENTS; ELECTRON TUBES; ELECTRONIC EQUIPMENT; ELEMENTS; EQUIPMENT; FILMS; MICROSCOPY; MICROWAVE EQUIPMENT; MICROWAVE TUBES; OXIDES; OXYGEN COMPOUNDS; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; SEMIMETALS; SOLAR EQUIPMENT; ZINC COMPOUNDS

Citation Formats

Hoon, Jian-Wei, Chan, Kah-Yoong, Krishnasamy, Jegenathan, and Tou, Teck-Yong. Zinc Oxide Thin Films Fabricated with Direct Current Magnetron Sputtering Deposition Technique. United States: N. p., 2011. Web. doi:10.1063/1.3573740.
Hoon, Jian-Wei, Chan, Kah-Yoong, Krishnasamy, Jegenathan, & Tou, Teck-Yong. Zinc Oxide Thin Films Fabricated with Direct Current Magnetron Sputtering Deposition Technique. United States. https://doi.org/10.1063/1.3573740
Hoon, Jian-Wei, Chan, Kah-Yoong, Krishnasamy, Jegenathan, and Tou, Teck-Yong. 2011. "Zinc Oxide Thin Films Fabricated with Direct Current Magnetron Sputtering Deposition Technique". United States. https://doi.org/10.1063/1.3573740.
@article{osti_21511542,
title = {Zinc Oxide Thin Films Fabricated with Direct Current Magnetron Sputtering Deposition Technique},
author = {Hoon, Jian-Wei and Chan, Kah-Yoong and Krishnasamy, Jegenathan and Tou, Teck-Yong},
abstractNote = {Zinc oxide (ZnO) is a very promising material for emerging large area electronic applications including thin-film sensors, transistors and solar cells. We fabricated ZnO thin films by employing direct current (DC) magnetron sputtering deposition technique. ZnO films with different thicknesses ranging from 100 nm to 1020 nm were deposited on silicon (Si) substrate. The deposition pressure was varied from 12 mTorr to 25 mTorr. The influences of the film thickness and the deposition pressure on structural properties of the ZnO films were investigated using Mahr surface profilometer and atomic force microscopy (AFM). The experimental results reveal that the film thickness and the deposition pressure play significant role in the structural formation of the deposited ZnO thin films. ZnO films deposited on Si substrates are promising for variety of thin-film sensor applications.},
doi = {10.1063/1.3573740},
url = {https://www.osti.gov/biblio/21511542}, journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 1328,
place = {United States},
year = {Wed Mar 30 00:00:00 EDT 2011},
month = {Wed Mar 30 00:00:00 EDT 2011}
}