Process Performance of Optima XEx Single Wafer High Energy Implanter

Journal Article · Fri Jan 07 00:00:00 EST 2011 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3548424· OSTI ID:21510116

Kim, J H; Yoon, Jongyoon; Kondratenko, S; David, J; Rubin, L M ^[1]; Jang, I S; Cha, J C; Joo, Y H; Lee, A B; Jin, S W ^[2]

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1. Axcelis Technologies, 108 Cherry Hill Drive, Beverly, MA 01950 (United States)
2. Hynix Semiconductor Inc., San 136-1 Ami, Bubal, Ichon, Kyoungki-do, 467-701 (Korea, Republic of)

To meet the process requirements for well formation in future CMOS memory production, high energy implanters require more robust angle, dose, and energy control while maintaining high productivity. The Optima XEx high energy implanter meets these requirements by integrating a traditional LINAC beamline with a robust single wafer handling system. To achieve beam angle control, Optima XEx can control both the horizontal and vertical beam angles to within 0.1 degrees using advanced beam angle measurement and correction. Accurate energy calibration and energy trim functions accelerate process matching by eliminating energy calibration errors. The large volume process chamber and UDC (upstream dose control) using faraday cups outside of the process chamber precisely control implant dose regardless of any chamber pressure increase due to PR (photoresist) outgassing. An optimized RF LINAC accelerator improves reliability and enables singly charged phosphorus and boron energies up to 1200 keV and 1500 keV respectively with higher beam currents. A new single wafer endstation combined with increased beam performance leads to overall increased productivity. We report on the advanced performance of Optima XEx observed during tool installation and volume production at an advanced memory fab.

• OSTI ID: 21510116
• Journal Information: AIP Conference Proceedings, Vol. 1321, Issue 1; Conference: IIT 2010: 18. international conference on ion implantation technology, Kyoto (Japan), 6-11 Jun 2010; Other Information: DOI: 10.1063/1.3548424; (c) 2010 American Institute of Physics; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

43 PARTICLE ACCELERATORS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BEAM CURRENTS
BORON IONS
CALIBRATION
CHANNELING
CORRECTIONS
DOSES
FARADAY CUPS
IMPLANTS
ION IMPLANTATION
LINEAR ACCELERATORS
MEMORY DEVICES
MEV RANGE 01-10
PERFORMANCE
PHOSPHORUS IONS
PRODUCTIVITY
SEMICONDUCTOR MATERIALS
ACCELERATORS
BEAM MONITORS
CHARGED PARTICLES
CURRENTS
ENERGY RANGE
IONS
MATERIALS
MEASURING INSTRUMENTS
MEV RANGE
MONITORS