Structural and Optical Properties Studies Of Ar{sup 2+} Ion Implanted Mn Deposited GaAs

Journal Article · Wed Dec 01 00:00:00 EST 2010 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3530456· OSTI ID:21509948

Tripthi, S; Dubey, R L; Dubey, S K; Yadav, A D ^[1]

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1. Department of Physics, University of Mumbai, Santacruz (E), Mumbai-400 098 (India)

Mn thin film deposited GaAs samples were implanted with 250 keV Ar{sup +2} ions for various fluences 5x10{sup 15}, 1x10{sup 16} and 5x10{sup 16} ions cm{sup -2}. Optical and structural properties of the samples have been investigated by using ultraviolet spectroscopy and X-ray diffraction techniques. Optical absorbance of the implanted samples was found to decrease with increase in argon ion fluence. XRD spectra of the samples implanted for ion fluences 5x10{sup 15} and 1x10{sup 16} showed the formation of (GaMn)As at 2{theta} value of 65.34 deg. The XRD spectrum of sample 1x10{sup 16} cm{sup -2} annealed at 450 deg. C showed the formation of magnetic phases.

• OSTI ID: 21509948
• Journal Information: AIP Conference Proceedings, Vol. 1313, Issue 1; Conference: PEFM-2010: International conference on physics of emerging functional materials, Mumbai (India), 22-24 Sep 2010; Other Information: DOI: 10.1063/1.3530456; (c) 2010 American Institute of Physics; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
ARGON IONS
CRYSTAL GROWTH
CRYSTAL STRUCTURE
GALLIUM ARSENIDES
ION IMPLANTATION
KEV RANGE 100-1000
MANGANESE
MOLECULAR BEAM EPITAXY
OPTICAL PROPERTIES
SPECTRA
SPECTROSCOPY
SUBSTRATES
THIN FILMS
ULTRAVIOLET RADIATION
X-RAY DIFFRACTION
ARSENIC COMPOUNDS
ARSENIDES
CHARGED PARTICLES
COHERENT SCATTERING
CRYSTAL GROWTH METHODS
DIFFRACTION
ELECTROMAGNETIC RADIATION
ELEMENTS
ENERGY RANGE
EPITAXY
FILMS
GALLIUM COMPOUNDS
HEAT TREATMENTS
IONS
KEV RANGE
METALS
PHYSICAL PROPERTIES
PNICTIDES
RADIATIONS
SCATTERING
TRANSITION ELEMENTS