Photoinduced stiffening and photoplastic effect of ZnS individual nanobelt in nanoindentation

Journal Article · Mon Nov 15 00:00:00 EST 2010 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3500421· OSTI ID:21476613

Zheng, X J; Yu, G C; Chen, Y Q ^[1]; Mao, S X ^[2]; Zhang, T ^[3]

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1. Key Laboratory for Low Dimensional Materials and Application Technology, Xiangtan University, Ministry of Education, Xiangtan 411105 (China)
2. Department of Mechanical Engineering, University of Pittsburgh, Pittsburgh, Pennsylvania 15261 (United States)
3. State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012 (China)

The photoinduced stiffening (PIS) and photoplastic effect (PPE) of ZnS individual nanobelt (NB) were observed by using a nanoindenter in conjunction with an incident ultraviolet (UV) light source system. The results show that the elastic modulus and hardness of ZnS individual NB under UV illumination are at least 32% and 20% larger than those in darkness. The mechanisms of PIS and PPE are interpreted by the increase in electronic strain and Peierls barrier due to the photogeneration of free carriers in ZnS individual NB. The research may offer useful guidelines to the application of optoelectronic devices based on individual nanostructures.

• OSTI ID: 21476613
• Journal Information: Journal of Applied Physics, Vol. 108, Issue 9; Other Information: DOI: 10.1063/1.3500421; (c) 2010 American Institute of Physics; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
CHARGE CARRIERS
ELASTICITY
HARDNESS
ILLUMINANCE
NANOSTRUCTURES
PLASTICITY
SEMICONDUCTOR MATERIALS
STRAINS
ULTRAVIOLET RADIATION
YOUNG MODULUS
ZINC SULFIDES
CHALCOGENIDES
ELECTROMAGNETIC RADIATION
INORGANIC PHOSPHORS
MATERIALS
MECHANICAL PROPERTIES
PHOSPHORS
RADIATIONS
SULFIDES
SULFUR COMPOUNDS
ZINC COMPOUNDS