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Title: Luminescence and creation of electron centers in UV-irradiated YAlO{sub 3} single crystals

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.3459881· OSTI ID:21476446
 [1]; ;  [2]; ;  [3]
  1. Institute of Solid State Physics, University of Latvia, Kengaraga 8, Riga, LV-1063 (Latvia)
  2. Institute of Physics, University of Tartu, Riia 142, 51014 Tartu (Estonia)
  3. Institute of Physics AS CR, Cukrovarnicka 10, 162 53 Prague (Czech Republic)

Luminescence and defect creation processes were studied by the photoluminescence, thermally stimulated luminescence, and electron paramagnetic resonance methods in the UV-irradiated single crystals of undoped YAlO{sub 3}, containing small amounts of Ce, Mo, and Ti ions as accidental impurities. The luminescence of the electron antisite Y{sub Al}{sup 2+}-type centers of different structures was found around 2.45 eV and studied at 4.2-500 K. The luminescence of the Ti{sup 3+}-related centers (2.03 and 1.73 eV) and Ti{sup 4+} centers (2.78 eV) was observed as well. Dependences of the number of the Y{sub Al}{sup 2+}-type and Ti{sup 3+}-related centers on the UV irradiation energy, temperature, and duration, as well as on various crystal heat-treatment procedures were examined. As a result of the photostimulated electron transfer from the O{sup 2-} ligand ions to Mo{sup 4+} and Ti{sup 4+} ions, the paramagnetic hole O{sup -}-type centers and electron Ti{sup 3+} and Mo{sup 3+} centers are created. The antisite Y{sub Al}{sup 2+}-type centers are created due to the photostimulated release of electrons mainly from the Mo{sup 3+} centers to the conduction band and their subsequent trapping at the Y{sub Al}{sup 3+} ions located near an oxygen vacancy or a defect at the neighboring Y{sup 3+} site.

OSTI ID:
21476446
Journal Information:
Journal of Applied Physics, Vol. 108, Issue 5; Other Information: DOI: 10.1063/1.3459881; (c) 2010 American Institute of Physics; ISSN 0021-8979
Country of Publication:
United States
Language:
English