Variations in {mu}{tau} measurements in cadmium zinc telluride

Journal Article · Tue Jun 15 00:00:00 EDT 2010 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3428475· OSTI ID:21476326

Jones, K A; Datta, A; Lynn, K G ^[1]; Franks, L A ^[2]

---

1. Washington State University, Pullman, Washington 99164 (United States)
2. DOE Consultant, Santa Barbara, California 93105 (United States)

A number of commonly employed experimental methods used to determine the {mu}{tau} product in the semiconductor CdZnTe were investigated. The objective was to determine possible differences in results inherent in the techniques. A pixelated and two planar devices were studied using various distinct methods together with different excitation sources and amplifier shaping times. Variations in the results up to a factor of 5 were found. Variations due to shaping times, particle type, and energy were evident.

• OSTI ID: 21476326
• Journal Information: Journal of Applied Physics, Vol. 107, Issue 12; Other Information: DOI: 10.1063/1.3428475; (c) 2010 American Institute of Physics; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CADMIUM COMPOUNDS
CARRIER LIFETIME
CARRIER MOBILITY
EXCITATION
RADIATION DETECTION
RESOLUTION
RESPONSE FUNCTIONS
SEMICONDUCTOR DETECTORS
SEMICONDUCTOR MATERIALS
VARIATIONS
ZINC TELLURIDES
CHALCOGENIDES
DETECTION
ENERGY-LEVEL TRANSITIONS
FUNCTIONS
LIFETIME
MATERIALS
MEASURING INSTRUMENTS
MOBILITY
RADIATION DETECTORS
TELLURIDES
TELLURIUM COMPOUNDS
ZINC COMPOUNDS