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Title: Experimental determination of band offsets at the SnS/CdS and SnS/InS{sub x}O{sub y} heterojunctions

Abstract

The semidirect x-ray photoelectron spectroscopy technique was used to measure the band alignments at the interface of heterostructures based on SnS. The layers were deposited by electrochemical deposition (ECD), chemical bath deposition (CBD), or photochemical deposition (PCD). The following four kinds of heterojunctions were characterized. (1) ECD-SnS/PCD-CdS. (2) CBD-SnS/PCD-CdS. (3) ECD-SnS/ECD-InS{sub x}O{sub y}. (4) CBD-SnS/ECD-InS{sub x}O{sub y}. The valence band offsets {Delta}E{sub V} of those four heterojunctions are determined to be 1.34, 1.59, 0.77, and 0.74{+-}0.3 eV, respectively.

Authors:
;  [1]
  1. Department of Engineering Physics, Electronics and Mechanics, Nagoya Institute of Technology, Gokiso, Showa, Nagoya 466-8555 (Japan)
Publication Date:
OSTI Identifier:
21476134
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 107; Journal Issue: 3; Other Information: DOI: 10.1063/1.3294619; (c) 2010 American Institute of Physics; Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CADMIUM SULFIDES; ELECTRODEPOSITION; ELECTRONIC STRUCTURE; EV RANGE; HETEROJUNCTIONS; INTERFACES; LAYERS; PHOTOCHEMISTRY; SEMICONDUCTOR MATERIALS; TIN SULFIDES; VALENCE; X-RAY PHOTOELECTRON SPECTROSCOPY; CADMIUM COMPOUNDS; CHALCOGENIDES; CHEMISTRY; DEPOSITION; ELECTROLYSIS; ELECTRON SPECTROSCOPY; ENERGY RANGE; INORGANIC PHOSPHORS; LYSIS; MATERIALS; PHOSPHORS; PHOTOELECTRON SPECTROSCOPY; SEMICONDUCTOR JUNCTIONS; SPECTROSCOPY; SULFIDES; SULFUR COMPOUNDS; SURFACE COATING; TIN COMPOUNDS

Citation Formats

Abdel Haleem, A M, and Ichimura, M. Experimental determination of band offsets at the SnS/CdS and SnS/InS{sub x}O{sub y} heterojunctions. United States: N. p., 2010. Web. doi:10.1063/1.3294619.
Abdel Haleem, A M, & Ichimura, M. Experimental determination of band offsets at the SnS/CdS and SnS/InS{sub x}O{sub y} heterojunctions. United States. https://doi.org/10.1063/1.3294619
Abdel Haleem, A M, and Ichimura, M. 2010. "Experimental determination of band offsets at the SnS/CdS and SnS/InS{sub x}O{sub y} heterojunctions". United States. https://doi.org/10.1063/1.3294619.
@article{osti_21476134,
title = {Experimental determination of band offsets at the SnS/CdS and SnS/InS{sub x}O{sub y} heterojunctions},
author = {Abdel Haleem, A M and Ichimura, M},
abstractNote = {The semidirect x-ray photoelectron spectroscopy technique was used to measure the band alignments at the interface of heterostructures based on SnS. The layers were deposited by electrochemical deposition (ECD), chemical bath deposition (CBD), or photochemical deposition (PCD). The following four kinds of heterojunctions were characterized. (1) ECD-SnS/PCD-CdS. (2) CBD-SnS/PCD-CdS. (3) ECD-SnS/ECD-InS{sub x}O{sub y}. (4) CBD-SnS/ECD-InS{sub x}O{sub y}. The valence band offsets {Delta}E{sub V} of those four heterojunctions are determined to be 1.34, 1.59, 0.77, and 0.74{+-}0.3 eV, respectively.},
doi = {10.1063/1.3294619},
url = {https://www.osti.gov/biblio/21476134}, journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 3,
volume = 107,
place = {United States},
year = {Mon Feb 15 00:00:00 EST 2010},
month = {Mon Feb 15 00:00:00 EST 2010}
}