Epitaxial growth, electrical and optical properties of a-plane InN on r-plane sapphire
Abstract
The heteroepitaxy of a-plane (1120) InN films on r-plane (1102) sapphire substrates, by nitrogen radio frequency plasma-assisted molecular beam epitaxy, has been investigated and compared to that of c-plane (0001) InN. The epitaxial growth of a-plane InN proceeded through the nucleation, growth, and coalescence of three-dimensional islands, resulting in surface roughness that increased monotonically with epilayer thickness. The full width at half maximum of (1120) x-ray diffraction rocking curves decreased significantly with increasing InN thickness, characteristic of structural improvement, and it reached the value of 24 arcmin for a 1 {mu}m thick film. Hall-effect measurements exhibited a similar dependence of electron concentration and mobility on thickness for both the a- and c-plane InN films. The analysis of the Hall-effect measurements, by considering the contribution of two conducting layers, indicates a similar accumulation of low mobility electrons with N{sub s}>10{sup 14} cm{sup -2} at the films' surface/interfacial region for both the a- and c-plane InN films. From optical transmittance measurements, the absorption edge of 0.768 eV was determined for the 1 {mu}m a-plane film, consistent with the expected Burstein-Moss effect. Photoluminescence spectra exhibited a lower energy peak at 0.631 eV, suggesting defect-related transitions.
- Authors:
-
- Microelectronics Research Group, IESL, FORTH, P.O. Box 1385, 71110 Heraklion-Crete (Greece)
- Publication Date:
- OSTI Identifier:
- 21476114
- Resource Type:
- Journal Article
- Journal Name:
- Journal of Applied Physics
- Additional Journal Information:
- Journal Volume: 107; Journal Issue: 2; Other Information: DOI: 10.1063/1.3284086; (c) 2010 American Institute of Physics; Journal ID: ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; COALESCENCE; ELECTRON DENSITY; ELECTRON MOBILITY; EMISSION SPECTRA; HALL EFFECT; INDIUM NITRIDES; MOLECULAR BEAM EPITAXY; NEUTRON DIFFRACTION; NITROGEN; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SAPPHIRE; SEMICONDUCTOR MATERIALS; SUBSTRATES; SURFACES; THIN FILMS; X-RAY DIFFRACTION; COHERENT SCATTERING; CORUNDUM; CRYSTAL GROWTH METHODS; DIFFRACTION; ELEMENTS; EMISSION; EPITAXY; FILMS; INDIUM COMPOUNDS; LUMINESCENCE; MATERIALS; MINERALS; MOBILITY; NITRIDES; NITROGEN COMPOUNDS; NONMETALS; OXIDE MINERALS; PARTICLE MOBILITY; PHOTON EMISSION; PHYSICAL PROPERTIES; PNICTIDES; SCATTERING; SPECTRA
Citation Formats
Ajagunna, A O, Iliopoulos, E, Tsiakatouras, G, Tsagaraki, K, Androulidaki, M, Georgakilas, A, and Physics Department, University of Crete, P.O. Box 2208, 71003 Heraklion-Crete. Epitaxial growth, electrical and optical properties of a-plane InN on r-plane sapphire. United States: N. p., 2010.
Web. doi:10.1063/1.3284086.
Ajagunna, A O, Iliopoulos, E, Tsiakatouras, G, Tsagaraki, K, Androulidaki, M, Georgakilas, A, & Physics Department, University of Crete, P.O. Box 2208, 71003 Heraklion-Crete. Epitaxial growth, electrical and optical properties of a-plane InN on r-plane sapphire. United States. https://doi.org/10.1063/1.3284086
Ajagunna, A O, Iliopoulos, E, Tsiakatouras, G, Tsagaraki, K, Androulidaki, M, Georgakilas, A, and Physics Department, University of Crete, P.O. Box 2208, 71003 Heraklion-Crete. 2010.
"Epitaxial growth, electrical and optical properties of a-plane InN on r-plane sapphire". United States. https://doi.org/10.1063/1.3284086.
@article{osti_21476114,
title = {Epitaxial growth, electrical and optical properties of a-plane InN on r-plane sapphire},
author = {Ajagunna, A O and Iliopoulos, E and Tsiakatouras, G and Tsagaraki, K and Androulidaki, M and Georgakilas, A and Physics Department, University of Crete, P.O. Box 2208, 71003 Heraklion-Crete},
abstractNote = {The heteroepitaxy of a-plane (1120) InN films on r-plane (1102) sapphire substrates, by nitrogen radio frequency plasma-assisted molecular beam epitaxy, has been investigated and compared to that of c-plane (0001) InN. The epitaxial growth of a-plane InN proceeded through the nucleation, growth, and coalescence of three-dimensional islands, resulting in surface roughness that increased monotonically with epilayer thickness. The full width at half maximum of (1120) x-ray diffraction rocking curves decreased significantly with increasing InN thickness, characteristic of structural improvement, and it reached the value of 24 arcmin for a 1 {mu}m thick film. Hall-effect measurements exhibited a similar dependence of electron concentration and mobility on thickness for both the a- and c-plane InN films. The analysis of the Hall-effect measurements, by considering the contribution of two conducting layers, indicates a similar accumulation of low mobility electrons with N{sub s}>10{sup 14} cm{sup -2} at the films' surface/interfacial region for both the a- and c-plane InN films. From optical transmittance measurements, the absorption edge of 0.768 eV was determined for the 1 {mu}m a-plane film, consistent with the expected Burstein-Moss effect. Photoluminescence spectra exhibited a lower energy peak at 0.631 eV, suggesting defect-related transitions.},
doi = {10.1063/1.3284086},
url = {https://www.osti.gov/biblio/21476114},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 2,
volume = 107,
place = {United States},
year = {Fri Jan 15 00:00:00 EST 2010},
month = {Fri Jan 15 00:00:00 EST 2010}
}