skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Electrical properties and stability of p-type ZnO film enhanced by alloying with S and heavy doping of Cu

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.3496038· OSTI ID:21467001
; ;  [1];  [1]; ; ;  [2]
  1. Department of Physics, State Key Laboratory Superhard Material, Jilin University, Changchun 130023 (China)
  2. Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 (China)

Single wurtzite p-type Zn{sub 1-y}Cu{sub y}O{sub 1-x}S{sub x} alloy films with 0.081{<=}x{<=}0.186 and 0.09{<=}y{<=}0.159 were grown on quartz reproducibly by magnetron sputtering. The alloys show very stable p-type conductivity with a hole concentration of 4.31-5.78x10{sup 19} cm{sup -3}, a resistivity of 0.29-0.34 {Omega} cm and a mobility of 0.32-0.49 cm{sup 2} V{sup -1} s{sup -1}. The p-type conductivity is attributed to substitution of Cu{sup +1} for the Zn site, and the ionization energy of the Cu{sup +1} acceptor is measured to be 53 meV, much less than that of Cu-doped ZnO reported previously. The small ionization energy is due to Cu heavy doping and increase in valence band maximum of ZnO induced by alloying with S.

OSTI ID:
21467001
Journal Information:
Applied Physics Letters, Vol. 97, Issue 14; Other Information: DOI: 10.1063/1.3496038; (c) 2010 American Institute of Physics; ISSN 0003-6951
Country of Publication:
United States
Language:
English