Electrical properties and stability of p-type ZnO film enhanced by alloying with S and heavy doping of Cu
- Department of Physics, State Key Laboratory Superhard Material, Jilin University, Changchun 130023 (China)
- Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 (China)
Single wurtzite p-type Zn{sub 1-y}Cu{sub y}O{sub 1-x}S{sub x} alloy films with 0.081{<=}x{<=}0.186 and 0.09{<=}y{<=}0.159 were grown on quartz reproducibly by magnetron sputtering. The alloys show very stable p-type conductivity with a hole concentration of 4.31-5.78x10{sup 19} cm{sup -3}, a resistivity of 0.29-0.34 {Omega} cm and a mobility of 0.32-0.49 cm{sup 2} V{sup -1} s{sup -1}. The p-type conductivity is attributed to substitution of Cu{sup +1} for the Zn site, and the ionization energy of the Cu{sup +1} acceptor is measured to be 53 meV, much less than that of Cu-doped ZnO reported previously. The small ionization energy is due to Cu heavy doping and increase in valence band maximum of ZnO induced by alloying with S.
- OSTI ID:
- 21467001
- Journal Information:
- Applied Physics Letters, Vol. 97, Issue 14; Other Information: DOI: 10.1063/1.3496038; (c) 2010 American Institute of Physics; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CONCENTRATION RATIO
COPPER
COPPER IONS
COPPER SULFIDES
DEPOSITION
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
HOLE MOBILITY
HOLES
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PHASE STABILITY
P-TYPE CONDUCTORS
QUARTZ
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DIMENSIONLESS NUMBERS
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ELEMENTS
FILMS
IONS
MATERIALS
METALS
MINERALS
MOBILITY
NONMETALS
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
SEMICONDUCTOR MATERIALS
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SULFIDES
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TRANSITION ELEMENT COMPOUNDS
TRANSITION ELEMENTS
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