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Title: Erbium diffusion in silicon dioxide

Erbium diffusion in silicon dioxide layers prepared by magnetron sputtering, chemical vapor deposition, and thermal growth has been investigated by secondary ion mass spectrometry, and diffusion coefficients have been extracted from simulations based on Fick's second law of diffusion. Erbium diffusion in magnetron sputtered silicon dioxide from buried erbium distributions has in particular been studied, and in this case a simple Arrhenius law can describe the diffusivity with an activation energy of 5.3{+-}0.1 eV. Within a factor of two, the erbium diffusion coefficients at a given temperature are identical for all investigated matrices.
Authors:
; ;  [1] ;  [2] ; ;  [2] ;  [3] ;  [1] ;  [3]
  1. Department of Physics and Astronomy, Aarhus University, DK-8000 Aarhus C (Denmark)
  2. Department of Physics and Nanotechnology, Aalborg University, DK-9220 Aalborg O (Denmark)
  3. (Denmark)
Publication Date:
OSTI Identifier:
21466996
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 97; Journal Issue: 14; Other Information: DOI: 10.1063/1.3497076; (c) 2010 American Institute of Physics
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ACTIVATION ENERGY; CHEMICAL VAPOR DEPOSITION; COMPUTERIZED SIMULATION; CRYSTAL GROWTH; DIFFUSION; ERBIUM; EV RANGE; FICK LAWS; IONS; LAYERS; MASS SPECTRA; MASS SPECTROSCOPY; SILICON OXIDES; SPUTTERING CHALCOGENIDES; CHARGED PARTICLES; CHEMICAL COATING; DEPOSITION; ELEMENTS; ENERGY; ENERGY RANGE; METALS; OXIDES; OXYGEN COMPOUNDS; RARE EARTHS; SILICON COMPOUNDS; SIMULATION; SPECTRA; SPECTROSCOPY; SURFACE COATING