Microwave induced zero-conductance state in a Corbino geometry two-dimensional electron gas with capacitive contacts
- Institute of Semiconductor Physics, Lavrenteva av 13, Novosibirsk 630090 (Russian Federation)
Microwave induced photoconductivity of a two-dimensional electron gas in selectively doped GaAs/AlAs heterostructures has been studied using the Corbino geometry with capacitive contacts at a temperature T=1.6 K and magnetic field B up to 0.5 T. Zero-conductance states have been observed in the samples under study subject to microwave radiation, similarly to the samples with Ohmic contacts. It has been shown that Ohmic contacts do not play a significant role for observation of zero-conductance states induced by microwave radiation.
- OSTI ID:
- 21466906
- Journal Information:
- Applied Physics Letters, Vol. 97, Issue 8; Other Information: DOI: 10.1063/1.3483765; (c) 2010 American Institute of Physics; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
DOPED MATERIALS
ELECTRIC CONTACTS
ELECTRON GAS
GALLIUM ARSENIDES
HETEROJUNCTIONS
MAGNETIC FIELDS
MICROWAVE RADIATION
PHOTOCONDUCTIVITY
SEMICONDUCTOR MATERIALS
TEMPERATURE RANGE 0000-0013 K
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
ELECTRIC CONDUCTIVITY
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
EQUIPMENT
GALLIUM COMPOUNDS
MATERIALS
PHYSICAL PROPERTIES
PNICTIDES
RADIATIONS
SEMICONDUCTOR JUNCTIONS
TEMPERATURE RANGE
SUPERCONDUCTIVITY AND SUPERFLUIDITY
36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
DOPED MATERIALS
ELECTRIC CONTACTS
ELECTRON GAS
GALLIUM ARSENIDES
HETEROJUNCTIONS
MAGNETIC FIELDS
MICROWAVE RADIATION
PHOTOCONDUCTIVITY
SEMICONDUCTOR MATERIALS
TEMPERATURE RANGE 0000-0013 K
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
ELECTRIC CONDUCTIVITY
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
EQUIPMENT
GALLIUM COMPOUNDS
MATERIALS
PHYSICAL PROPERTIES
PNICTIDES
RADIATIONS
SEMICONDUCTOR JUNCTIONS
TEMPERATURE RANGE