Impact of heavy hole-light hole coupling on optical selection rules in GaAs quantum dots

Journal Article · Mon Aug 02 00:00:00 EDT 2010 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3473824· OSTI ID:21466880

Belhadj, T; Amand, T; Kunz, S; Marie, X; Urbaszek, B ^[1]; Kunold, A ^[1]; Simon, C -M ^[1]; Kuroda, T; Abbarchi, M; Mano, T; Sakoda, K ^[2]

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1. INSA-CNRS-UPS, LPCNO, Universite de Toulouse, 135 Av. Rangueil, 31077 Toulouse (France)
2. National Institute for Material Science, Namiki 1-1, Tsukuba 305-0044 (Japan)

We report strong heavy hole-light hole mixing in GaAs quantum dots grown by droplet epitaxy. Using the neutral and charged exciton emission as a monitor we observe the direct consequence of quantum dot symmetry reduction in this strain free system. By fitting the polar diagram of the emission with simple analytical expressions obtained from k{center_dot}p theory we are able to extract the mixing that arises from the heavy-light hole coupling due to the geometrical asymmetry of the quantum dot.

• OSTI ID: 21466880
• Journal Information: Applied Physics Letters, Vol. 97, Issue 5; Other Information: DOI: 10.1063/1.3473824; (c) 2010 American Institute of Physics; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ASYMMETRY
COUPLING
CRYSTAL GROWTH
DROPLETS
EXCITONS
GALLIUM ARSENIDES
HOLES
LAYERS
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
QUANTUM DOTS
SELECTION RULES
SEMICONDUCTOR MATERIALS
STRAINS
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL GROWTH METHODS
EMISSION
EPITAXY
GALLIUM COMPOUNDS
LUMINESCENCE
MATERIALS
NANOSTRUCTURES
PARTICLES
PHOTON EMISSION
PNICTIDES
QUASI PARTICLES