Generation of difference-frequency radiation in the far- and mid-IR ranges in a two-chip laser based on gallium arsenide on a germanium substrate

Journal Article · Tue Sep 30 00:00:00 EDT 2008 · Quantum Electronics (Woodbury, N.Y.)

DOI:https://doi.org/10.1070/QE2008V038N09ABEH013796· OSTI ID:21466840

Aleshkin, V Ya; Dubinov, A A ^[1]

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1. Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod (Russian Federation)

The possibility of efficient generation of difference-frequency radiation in the far- and mid-IR ranges in a two-chip laser based on gallium arsenide grown on a germanium substrate is considered. It is shown that a laser with a waveguide of width 100 {mu}m emitting 1 W in the near-IR range can generate {approx}40 {mu}W at the difference frequency in the region 5-50 THz at room temperature. (nonlinear optical phenomena)

• OSTI ID: 21466840
• Journal Information: Quantum Electronics (Woodbury, N.Y.), Vol. 38, Issue 9; Other Information: DOI: 10.1070/QE2008v038n09ABEH013796; ISSN 1063-7818
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
FREQUENCY DEPENDENCE
GALLIUM ARSENIDES
GERMANIUM
LASERS
NEAR INFRARED RADIATION
RADIATION SOURCES
SUBSTRATES
TEMPERATURE RANGE 0273-0400 K
WAVEGUIDES
ARSENIC COMPOUNDS
ARSENIDES
ELECTROMAGNETIC RADIATION
ELEMENTS
GALLIUM COMPOUNDS
INFRARED RADIATION
METALS
PNICTIDES
RADIATIONS
TEMPERATURE RANGE