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Title: Compositional evolution of SiGe islands on patterned Si (001) substrates

The authors investigate, by atomic-force-microscopy-based nanotomography, the composition evolution of ordered SiGe islands grown on pit-patterned Si (001) substrates as their size and aspect ratio increase with increasing Ge deposition. Compared to islands grown on flat substrates, the ordered island arrays show improved size, shape, and compositional homogeneity. The three-dimensional composition profiles of individual pyramids, domes, and barns reveal that the Ge fraction at the base and in subsurface regions of the islands decreases with increasing amount of deposited Ge.
Authors:
 [1] ;  [2] ; ;  [3] ;  [1]
  1. Institute of Semiconductor and Solid State Physics, University Linz, A-4040 Linz (Austria)
  2. (Germany)
  3. Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, D-01069 Dresden (Germany)
Publication Date:
OSTI Identifier:
21464570
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 97; Journal Issue: 20; Other Information: DOI: 10.1063/1.3514239; (c) 2010 American Institute of Physics
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; CRYSTAL STRUCTURE; DEPOSITION; EPITAXY; FABRICATION; GERMANIUM ALLOYS; GERMANIUM SILICIDES; LAYERS; MOLECULAR STRUCTURE; NANOSTRUCTURES; RESIDUAL STRESSES; SEMICONDUCTOR MATERIALS; SILICON; SILICON ALLOYS; SUBSTRATES ALLOYS; CRYSTAL GROWTH METHODS; ELEMENTS; GERMANIUM COMPOUNDS; MATERIALS; MICROSCOPY; SEMIMETALS; SILICIDES; SILICON COMPOUNDS; STRESSES