Detection of single photons by a resonant tunneling heterostructure with a quantum dot layer
- Russian Academy of Sciences, Institute of Microelectronics Technology and High Purity Materials (Russian Federation)
Light absorption by GaAs/AlAs heterostructures with a layer of self-assembled InAs quantum dots (QDs) at resonant tunneling through an energy-selected QD has been investigated. A high sensitivity of the current through this selected tunneling channel to the absorption of single photons with a wavelength {lambda} {<=} 860 nm up to a temperature of 50 K is demonstrated; this sensitivity is caused by the Coulomb effect of the photoexcited holes captured by surrounding QDs on the resonance conditions. It is shown that single-photon absorption can discretely change the current through the system under study by a factor of more than 50. The captured-hole lifetimes have been measured, and a model has been developed to qualitatively describe the experimental data. It is also demonstrated that the InAs monolayer can effectively absorb photons. The properties of the heterostructure studied can be used not only to detect photons but also to design logical valves and optical memory devices.
- OSTI ID:
- 21443437
- Journal Information:
- Journal of Experimental and Theoretical Physics, Vol. 111, Issue 2; Other Information: DOI: 10.1134/S1063776110080194; Copyright (c) 2010 Pleiades Publishing, Ltd.; ISSN 1063-7761
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ABSORPTION
ALUMINIUM ARSENIDES
DETECTION
ELECTRIC CURRENTS
GALLIUM ARSENIDES
HETEROJUNCTIONS
HOLES
INDIUM ARSENIDES
INTERFACES
LAYERS
PHOTONS
QUANTUM DOTS
RESONANCE
SENSITIVITY
TEMPERATURE DEPENDENCE
TUNNEL EFFECT
VISIBLE RADIATION
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
BOSONS
CURRENTS
ELECTROMAGNETIC RADIATION
ELEMENTARY PARTICLES
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
MASSLESS PARTICLES
NANOSTRUCTURES
PNICTIDES
RADIATIONS
SEMICONDUCTOR JUNCTIONS
SORPTION