Transport properties of undoped and Br-doped PbTe sintered at high-temperature and pressure >=4.0 GPa

Journal Article · Thu Oct 15 00:00:00 EDT 2009 · Journal of Solid State Chemistry

DOI:https://doi.org/10.1016/j.jssc.2009.07.004· OSTI ID:21372321

Dong, Yongkwan ^[1]; McGuire, Michael A ^[2]; Malik, Abds-Sami ^[3]

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1. Baker Laboratory, Department of Chemistry, Cornell University, Ithaca, NY 14853-1301 (United States)
2. Department of Physics, Clark Hall, Cornell University, Ithaca, NY 14853 (United States)
3. Diamond Innovations, 6325 Huntley Road, Worthington, OH 43085 (United States)

The thermoelectric properties of nominally undoped PbTe and Br doped PbTe materials sintered at high-pressure and high-temperature (HPHT) have been studied. All samples show n-type semiconducting behavior with negative thermopower. For undoped PbTe, four different HPHT treatments were performed at pressures between 4.0 and 6.5 GPa. PbTe doped with Br at 0.5, 1.0, 2.0, 3.0x10{sup 19} cm{sup -3} was HPHT treated at 4.0 GPa and 1045 deg. C. As the dopant concentration increases, the absolute thermopower decreases, thermal conductivity increases, and electrical resistivity decreases. At a nominal dopant concentration of 1.0x10{sup 19} cm{sup -3}, carrier mobility of 1165 cm{sup 2}/V s and dimensionless thermoelectric figure-of-merit, ZT, of around 0.27 at 300 K were obtained. These results demonstrate that HPHT post-processing is a viable and controllable way of tuning the thermoelectric properties of PbTe-based materials. - Abstract: The effect, on thermoelectric properties, of sintering undoped and Br doped PbTe at pressures >=4.0 GPa and 1045 deg. C are reported and compared with conventionally sintered materials. Display Omitted

• OSTI ID: 21372321
• Journal Information: Journal of Solid State Chemistry, Vol. 182, Issue 10; Other Information: DOI: 10.1016/j.jssc.2009.07.004; PII: S0022-4596(09)00305-3; Copyright (c) 2009 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; ISSN 0022-4596
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BROMINE
CARRIER MOBILITY
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
LEAD TELLURIDES
PERFORMANCE
PRESSURE RANGE GIGA PA
SEMICONDUCTOR MATERIALS
SINTERED MATERIALS
SINTERING
TEMPERATURE RANGE 0273-0400 K
TEMPERATURE RANGE 1000-4000 K
THERMAL CONDUCTIVITY
THERMOELECTRIC PROPERTIES
CHALCOGENIDES
ELECTRICAL PROPERTIES
ELEMENTS
FABRICATION
HALOGENS
LEAD COMPOUNDS
MATERIALS
MOBILITY
NONMETALS
PHYSICAL PROPERTIES
PRESSURE RANGE
TELLURIDES
TELLURIUM COMPOUNDS
TEMPERATURE RANGE
THERMODYNAMIC PROPERTIES