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Title: MBE Growth of GaAs Whiskers on Si Nanowires

Abstract

We present the growth of GaAs nanowhiskers by molecular beam epitaxy on Si (111) nanowires grown by low-pressure chemical vapor deposition. The whiskers grow in the wurtzite phase, along the [0001] direction, on the {l_brace}112{r_brace} facets of the Si nanowire, forming a star-like six-fold radial symmetry. The photoluminescence shows a 30 meV blue shift with respect to bulk GaAs, additionally a GaAs/AlAs core-shell heterostructure shows increased luminescence.

Authors:
 [1]; ; ; ;  [1]; ; ; ;  [2]; ;  [3];  [1]
  1. Center for Micro- and Nanostructures, Vienna University of Technology, Floragasse 7/392, 1040 Wien (Austria)
  2. Institute for Solid-State Electronics, Vienna University of Technology, Floragasse 7/362, 1040 Wien (Austria)
  3. Photonics Institute, Vienna University of Technology, Gusshausstrasse 29/387, 1040 Wien (Austria)
Publication Date:
OSTI Identifier:
21371399
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 1199; Journal Issue: 1; Conference: 29. international conference on the physics of semiconductors, Rio de Janeiro (Brazil), 27 Jul - 1 Aug 2008; Other Information: DOI: 10.1063/1.3295399; (c) 2009 American Institute of Physics; Journal ID: ISSN 0094-243X
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM ARSENIDES; CHEMICAL VAPOR DEPOSITION; CRYSTAL STRUCTURE; GALLIUM ARSENIDES; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; QUANTUM WIRES; SEMICONDUCTOR MATERIALS; SILICON; WHISKERS; X-RAY DIFFRACTION; ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; CHEMICAL COATING; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; CRYSTALS; DEPOSITION; DIFFRACTION; ELEMENTS; EMISSION; EPITAXY; GALLIUM COMPOUNDS; LUMINESCENCE; MATERIALS; MONOCRYSTALS; NANOSTRUCTURES; PHOTON EMISSION; PNICTIDES; SCATTERING; SEMICONDUCTOR JUNCTIONS; SEMIMETALS; SURFACE COATING

Citation Formats

Maxwell Andrews, Aaron, Institute for Solid-State Electronics, Vienna University of Technology, Floragasse 7/362, 1040 Wien, Photonics Institute, Vienna University of Technology, Gusshausstrasse 29/387, 1040 Wien, Klang, Pavel, Detz, Hermann, Schramboeck, Matthias, Schrenk, Werner, Lugstein, Alois, Steinmair, Mathias, Hyun, Youn-Joo, Bertagnolli, Emmerich, Mueller, Thomas, Unterrainer, Karl, Strasser, Gottfried, and Dept. of Physics and Dept. of Electrical Engineering, SUNY at Buffalo, 332 Bonner Hall, New York 14260. MBE Growth of GaAs Whiskers on Si Nanowires. United States: N. p., 2010. Web. doi:10.1063/1.3295399.
Maxwell Andrews, Aaron, Institute for Solid-State Electronics, Vienna University of Technology, Floragasse 7/362, 1040 Wien, Photonics Institute, Vienna University of Technology, Gusshausstrasse 29/387, 1040 Wien, Klang, Pavel, Detz, Hermann, Schramboeck, Matthias, Schrenk, Werner, Lugstein, Alois, Steinmair, Mathias, Hyun, Youn-Joo, Bertagnolli, Emmerich, Mueller, Thomas, Unterrainer, Karl, Strasser, Gottfried, & Dept. of Physics and Dept. of Electrical Engineering, SUNY at Buffalo, 332 Bonner Hall, New York 14260. MBE Growth of GaAs Whiskers on Si Nanowires. United States. https://doi.org/10.1063/1.3295399
Maxwell Andrews, Aaron, Institute for Solid-State Electronics, Vienna University of Technology, Floragasse 7/362, 1040 Wien, Photonics Institute, Vienna University of Technology, Gusshausstrasse 29/387, 1040 Wien, Klang, Pavel, Detz, Hermann, Schramboeck, Matthias, Schrenk, Werner, Lugstein, Alois, Steinmair, Mathias, Hyun, Youn-Joo, Bertagnolli, Emmerich, Mueller, Thomas, Unterrainer, Karl, Strasser, Gottfried, and Dept. of Physics and Dept. of Electrical Engineering, SUNY at Buffalo, 332 Bonner Hall, New York 14260. 2010. "MBE Growth of GaAs Whiskers on Si Nanowires". United States. https://doi.org/10.1063/1.3295399.
@article{osti_21371399,
title = {MBE Growth of GaAs Whiskers on Si Nanowires},
author = {Maxwell Andrews, Aaron and Institute for Solid-State Electronics, Vienna University of Technology, Floragasse 7/362, 1040 Wien and Photonics Institute, Vienna University of Technology, Gusshausstrasse 29/387, 1040 Wien and Klang, Pavel and Detz, Hermann and Schramboeck, Matthias and Schrenk, Werner and Lugstein, Alois and Steinmair, Mathias and Hyun, Youn-Joo and Bertagnolli, Emmerich and Mueller, Thomas and Unterrainer, Karl and Strasser, Gottfried and Dept. of Physics and Dept. of Electrical Engineering, SUNY at Buffalo, 332 Bonner Hall, New York 14260},
abstractNote = {We present the growth of GaAs nanowhiskers by molecular beam epitaxy on Si (111) nanowires grown by low-pressure chemical vapor deposition. The whiskers grow in the wurtzite phase, along the [0001] direction, on the {l_brace}112{r_brace} facets of the Si nanowire, forming a star-like six-fold radial symmetry. The photoluminescence shows a 30 meV blue shift with respect to bulk GaAs, additionally a GaAs/AlAs core-shell heterostructure shows increased luminescence.},
doi = {10.1063/1.3295399},
url = {https://www.osti.gov/biblio/21371399}, journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 1199,
place = {United States},
year = {Mon Jan 04 00:00:00 EST 2010},
month = {Mon Jan 04 00:00:00 EST 2010}
}