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Title: Adsorption-controlled growth of BiMnO{sub 3} films by molecular-beam epitaxy

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.3457786· OSTI ID:21366998
 [1]; ; ;  [2]; ; ;  [3]; ;  [4]; ;  [1]; ;  [5]
  1. Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853 (United States)
  2. Department of Physics, Pennsylvania State University, University Park, Pennsylvania 16802 (United States)
  3. Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States)
  4. Department of Chemistry, University of Tennessee, Knoxville, Tennessee 37996 (United States)
  5. Institute of Bio- and Nano-Systems (IBN1-IT), JARA-Fundamentals of Future Information Technology, Research Centre Juelich, D-52425 Juelich (Germany)

We have developed the means to grow BiMnO{sub 3} thin films with unparalleled structural perfection by reactive molecular-beam epitaxy and determined its band gap. Film growth occurs in an adsorption-controlled growth regime. Within this growth window bounded by oxygen pressure and substrate temperature at a fixed bismuth overpressure, single-phase films of the metastable perovskite BiMnO{sub 3} may be grown by epitaxial stabilization. X-ray diffraction reveals phase-pure and epitaxial films with omega rocking curve full width at half maximum values as narrow as 11 arc sec (0.003 deg. ). Optical absorption measurements reveal that BiMnO{sub 3} has a direct band gap of 1.1+-0.1 eV.

OSTI ID:
21366998
Journal Information:
Applied Physics Letters, Vol. 96, Issue 26; Other Information: DOI: 10.1063/1.3457786; (c) 2010 American Institute of Physics; ISSN 0003-6951
Country of Publication:
United States
Language:
English