Electronic structure of (Ge{sub 2}Sb{sub 2}Te{sub 5}){sub 1-x}(In{sub 3}SbTe{sub 2}){sub x} investigated by x-ray photoelectron spectroscopy

Journal Article · Sat Aug 15 00:00:00 EDT 2009 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3190500· OSTI ID:21361784

Benayad, Anass; Kim, Kihong; Lee, JaeCheol ^[1]; Kang, YounSeon; Suh, Dong-Seok; Kim, KiJoon; Kim, CheolKyu; Lee, Tae-Yon; Noh, Jin-Seo; Khang, YoonHo ^[2]; Shin, Hyun-Joon ^[3]

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1. Analytical Engineering Group, Samsung Advanced Institute of Technology (SAIT), Samsung Electronics Co., Ltd., P.O. Box 111, Suwon 440-600 (Korea, Republic of)
2. Semiconductor Device Laboratory, Samsung Advanced Institute of Technology (SAIT), Samsung Electronics Co., Ltd., P.O. Box 111, Suwon 440-600 (Korea, Republic of)
3. Pohang Accelerator Laboratory, Pohang University of Science and Technology, Pohang 790-784 (Korea, Republic of)

We have investigated the core levels and the valence band of (Ge{sub 2}Sb{sub 2}Te{sub 5}){sub 1-x}(In{sub 3}Sb{sub 1}Te{sub 2}){sub x} quaternary phase system (IGST) by means of x-ray photoelectron spectroscopy. A systematic shift of Sb 3d and Ge 2p core-level peaks toward lower binding energies side was observed with increasing indium amount, whereas the In 3d and Te 3d core peaks showed less change. The Sb 3d and Ge 2p core-level shift is attributed to an increase in the electronic charge of p-electrons dependent of indium amount. The valence band spectra show a distinct change in the sp configuration with indium concentration change. The change in the local bonding as the indium amount increase has a profound impact on both local atomic arrangement and amorphous-to-crystalline transformation temperature. The difference in the photoemission spectra have been discussed according to a simple structural model suggesting that the Na site in IGST can be occupied by Te, Sb, In, and vacancy, whereas in GST it is occupied only by Te.

• OSTI ID: 21361784
• Journal Information: Journal of Applied Physics, Vol. 106, Issue 4; Other Information: DOI: 10.1063/1.3190500; (c) 2009 American Institute of Physics; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANTIMONY ALLOYS
BINDING ENERGY
ELECTRONIC STRUCTURE
GERMANIUM ALLOYS
INDIUM
INDIUM ALLOYS
PHASE CHANGE MATERIALS
PHASE TRANSFORMATIONS
PHOTOEMISSION
STRUCTURAL MODELS
TELLURIUM ALLOYS
THIN FILMS
VACANCIES
X-RAY PHOTOELECTRON SPECTROSCOPY
ALLOYS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELECTRON SPECTROSCOPY
ELEMENTS
EMISSION
ENERGY
FILMS
MATERIALS
METALS
PHOTOELECTRON SPECTROSCOPY
POINT DEFECTS
SECONDARY EMISSION
SPECTROSCOPY