skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Epitaxial growth of fcc-Co{sub x}Ni{sub 100-x} thin films on MgO(110) single-crystal substrates

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.3267878· OSTI ID:21359400
; ; ;  [1];  [2]
  1. Faculty of Science and Engineering, Chuo University, 1-13-27 Kasuga, Bunkyo-ku, Tokyo 112-8551 (Japan)
  2. Graduate School of Fine Arts, Tokyo National University of Fine Arts and Music, 12-8 Ueno-koen, Taito-ku, Tokyo 110-8714 (Japan)

Co{sub x}Ni{sub 100-x} (x=100, 80, 20, 0 at. %) epitaxial thin films were prepared on MgO(110) single-crystal substrates heated at 300 deg. C by ultrahigh vacuum molecular beam epitaxy. The growth mechanism is discussed based on lattice strain and crystallographic defects. CoNi(110) single-crystal films with a fcc structure are obtained for all compositions. Co{sub x}Ni{sub 100-x} film growth follows the Volmer-Weber mode. X-ray diffraction analysis indicates that the out-of-plane and the in-plane lattice spacings of the Co{sub x}Ni{sub 100-x} films are in agreement within +-0.5% with the values of the respective bulk Co{sub x}Ni{sub 100-x} crystals, suggesting that the strain in the film is very small. High-resolution cross-sectional transmission microscopy shows that an atomically sharp boundary is formed between a Co(110){sub fcc} film and a MgO(110) substrate, where periodical misfit dislocations are preferentially introduced in the film at the Co/MgO interface. The presence of such periodical misfit dislocations relieves the strain caused by the lattice mismatch between the film and the substrate.

OSTI ID:
21359400
Journal Information:
Journal of Applied Physics, Vol. 106, Issue 12; Other Information: DOI: 10.1063/1.3267878; (c) 2009 American Institute of Physics; ISSN 0021-8979
Country of Publication:
United States
Language:
English