Origin of the butterfly-shaped magnetoresistance in reactive sputtered epitaxial Fe{sub 3}O{sub 4} films

Journal Article · Sat Aug 01 00:00:00 EDT 2009 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3187537· OSTI ID:21359360

Li, P; Zhang, L T; Mi, W B; Jiang, E Y; Bai, H L ^[1]

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1. Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Institute of Advanced Materials Physics, Faculty of Science, Tianjin University, Tianjin 300072 (China)

Epitaxial Fe{sub 3}O{sub 4} thin films were synthesized by facing-target reactive sputtering Fe targets. The epitaxy of the Fe{sub 3}O{sub 4} film on MgO (100) was examined macroscopically using x-ray diffraction, including conventional theta-2theta scan, tilting 2theta scan, phi scan, and pole figure. The observed low-field butterfly-shaped magnetoresistance (MR) are explained by the primary fast rotation of the spins far away from antiphase boundaries and the high-field MR changing linearly with magnetic field can be understood by the gradual rotation of the spins near the antiphase boundaries. It is magnetocrystalline anisotropy that causes an increase in MR below Verwey transition temperature.

• OSTI ID: 21359360
• Journal Information: Journal of Applied Physics, Vol. 106, Issue 3; Other Information: DOI: 10.1063/1.3187537; (c) 2009 American Institute of Physics; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANISOTROPY
DEPOSITION
EPITAXY
FERRITES
IRON OXIDES
LAYERS
MAGNESIUM OXIDES
MAGNETIC FIELDS
MAGNETORESISTANCE
SPUTTERING
TEXTURE
THIN FILMS
TRANSITION TEMPERATURE
X-RAY DIFFRACTION
ALKALINE EARTH METAL COMPOUNDS
CHALCOGENIDES
COHERENT SCATTERING
CRYSTAL GROWTH METHODS
DIFFRACTION
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
FERRIMAGNETIC MATERIALS
FILMS
IRON COMPOUNDS
MAGNESIUM COMPOUNDS
MAGNETIC MATERIALS
MATERIALS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
SCATTERING
THERMODYNAMIC PROPERTIES
TRANSITION ELEMENT COMPOUNDS