Application of the high-resolution grazing-emission x-ray fluorescence method for impurities control in semiconductor nanotechnology

Journal Article · Wed Apr 15 00:00:00 EDT 2009 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3086658· OSTI ID:21356126

Szlachetko, J ^[1]; Banas, D; Kubala-Kukus, A; Pajek, M ^[1]; Cao, W; Dousse, J -Cl; Hoszowska, J; Kayser, Y; Szlachetko, M ^[2]; Kavcic, M ^[3]; Salome, M; Susini, J ^[4]

---

1. Institute of Physics, Jan Kochanowski University, 25-406 Kielce (Poland)
2. Department of Physics, University of Fribourg, CH-1700 Fribourg (Switzerland)
3. J. Stefan Institute, SI-1001, Ljubljana (Slovenia)
4. European Synchrotron Radiation Facility (ESRF), F-38043 Grenoble (France)

We report on the application of synchrotron radiation based high-resolution grazing-emission x-ray fluorescence (GEXRF) method to measure low-level impurities on silicon wafers. The presented high-resolution GEXRF technique leads to direct detection limits of about 10{sup 12} atoms/cm{sup 2}. The latter can be presumably further improved down to 10{sup 7} atoms/cm{sup 2} by combining the synchrotron radiation-based GEXRF method with the vapor phase decomposition preconcentration technique. The capability of the high-resolution GEXRF method to perform surface-sensitive elemental mappings with a lateral resolution of several tens of micrometers was probed.

• OSTI ID: 21356126
• Journal Information: Journal of Applied Physics, Vol. 105, Issue 8; Other Information: DOI: 10.1063/1.3086658; (c) 2009 American Institute of Physics; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
DECOMPOSITION
FLUORESCENCE
NANOSTRUCTURES
SEMICONDUCTOR MATERIALS
SILICON
SYNCHROTRON RADIATION
X-RAY FLUORESCENCE ANALYSIS
BREMSSTRAHLUNG
CHEMICAL ANALYSIS
CHEMICAL REACTIONS
ELECTROMAGNETIC RADIATION
ELEMENTS
EMISSION
LUMINESCENCE
MATERIALS
NONDESTRUCTIVE ANALYSIS
PHOTON EMISSION
RADIATIONS
SEMIMETALS
X-RAY EMISSION ANALYSIS