Optical properties of antimony-doped p-type ZnO films fabricated by pulsed laser deposition

Journal Article · Mon Jun 01 00:00:00 EDT 2009 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3126518· OSTI ID:21352225

Pan, X H ^[1]; Guo, W; Pan, X Q ^[2]; Ye, Z Z; He, H P ^[1]; Liu, B; Che, Y ^[3]

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1. State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027 (China)
2. Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States)
3. Functional Materials Group, IMRA America, Inc., Ann Arbor, Michigan 48105 (United States)

We investigated optical properties of Sb-doped p-type ZnO films grown on n-Si (100) substrates by oxygen plasma-assisted pulsed laser deposition. Two acceptor states, with the acceptor levels of 161 and 336 meV, are identified by well-resolved photoluminescence spectra. Under oxygen-rich conditions, the deep acceptor in Sb-doped ZnO film is Zn vacancy. The shallow acceptor is Sb{sub Zn}-2V{sub Zn} complex induced by Sb doping. The origin of p-type behavior in Sb-doped ZnO has been ascribed to the formation of Sb{sub Zn}-2V{sub Zn} complex.

• OSTI ID: 21352225
• Journal Information: Journal of Applied Physics, Vol. 105, Issue 11; Other Information: DOI: 10.1063/1.3126518; (c) 2009 American Institute of Physics; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANTIMONY
CRYSTAL GROWTH
DOPED MATERIALS
ENERGY BEAM DEPOSITION
IMPURITIES
LASER RADIATION
OPTICAL PROPERTIES
OXYGEN
PHOTOLUMINESCENCE
PLASMA
PULSED IRRADIATION
SEMICONDUCTOR MATERIALS
SILICON
THIN FILMS
VACANCIES
ZINC OXIDES
CHALCOGENIDES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DEPOSITION
ELECTROMAGNETIC RADIATION
ELEMENTS
EMISSION
FILMS
IRRADIATION
LUMINESCENCE
MATERIALS
METALS
NONMETALS
OXIDES
OXYGEN COMPOUNDS
PHOTON EMISSION
PHYSICAL PROPERTIES
POINT DEFECTS
RADIATIONS
SEMIMETALS
SURFACE COATING
ZINC COMPOUNDS