Europium doping of zincblende GaN by ion implantation

Journal Article · Mon Jun 01 00:00:00 EDT 2009 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3138806· OSTI ID:21352222

Lorenz, K; Franco, N; Darakchieva, V; Alves, E ^[1]; Roqan, I S; O'Donnell, K P; Trager-Cowan, C; Martin, R W ^[2]; As, D J; Panfilova, M ^[3]

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1. Instituto Tecnologico e Nuclear, EN10, 2686-953 Sacavem (Portugal)
2. Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG (United Kingdom)
3. Department of Physics, University of Paderborn, 33098 Paderborn (Germany)

Eu was implanted into high quality cubic (zincblende) GaN (ZB-GaN) layers grown by molecular beam epitaxy. Detailed structural characterization before and after implantation was performed by x-ray diffraction (XRD) and Rutherford backscattering/channeling spectrometry. A low concentration (<10%) of wurtzite phase inclusions was observed by XRD analysis in as-grown samples with their (0001) planes aligned with the (111) planes of the cubic lattice. Implantation of Eu causes an expansion of the lattice parameter in the implanted region similar to that observed for the c-lattice parameter of wurtzite GaN (W-GaN). For ZB-GaN:Eu, a large fraction of Eu ions is found on a high symmetry interstitial site aligned with the <110> direction, while a Ga substitutional site is observed for W-GaN:Eu. The implantation damage in ZB-GaN:Eu could partly be removed by thermal annealing, but an increase in the wurtzite phase fraction was observed at the same time. Cathodoluminescence, photoluminescence (PL), and PL excitation spectroscopy revealed several emission lines which can be attributed to distinct Eu-related optical centers in ZB-GaN and W-GaN inclusions.

• OSTI ID: 21352222
• Journal Information: Journal of Applied Physics, Vol. 105, Issue 11; Other Information: DOI: 10.1063/1.3138806; (c) 2009 American Institute of Physics; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
CATHODOLUMINESCENCE
CRYSTAL GROWTH
CUBIC LATTICES
EUROPIUM
EUROPIUM IONS
EXCITATION
GALLIUM NITRIDES
INTERSTITIALS
ION IMPLANTATION
LATTICE PARAMETERS
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SEMICONDUCTOR MATERIALS
THIN FILMS
X-RAY DIFFRACTION
ZINC SULFIDES
CHALCOGENIDES
CHARGED PARTICLES
COHERENT SCATTERING
CRYSTAL DEFECTS
CRYSTAL GROWTH METHODS
CRYSTAL LATTICES
CRYSTAL STRUCTURE
DIFFRACTION
ELEMENTS
EMISSION
ENERGY-LEVEL TRANSITIONS
EPITAXY
FILMS
GALLIUM COMPOUNDS
HEAT TREATMENTS
INORGANIC PHOSPHORS
IONS
LUMINESCENCE
MATERIALS
METALS
NITRIDES
NITROGEN COMPOUNDS
PHOSPHORS
PHOTON EMISSION
PNICTIDES
POINT DEFECTS
RARE EARTHS
SCATTERING
SPECTROSCOPY
SULFIDES
SULFUR COMPOUNDS
ZINC COMPOUNDS