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Title: Establishing the mechanism of thermally induced degradation of ZnO:Al electrical properties using synchrotron radiation

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.3385024· OSTI ID:21347352
; ; ; ; ; ;  [1];  [2]
  1. Institute of Ion Beam Physics and Materials Research, Forschungszentrum Dresden-Rossendorf, P.O. Box 510119, 01314 Dresden (Germany)
  2. Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Cientificas, E-28049 Madrid (Spain)

X-ray absorption near edge structure and x-ray diffraction studies with synchrotron radiation have been used to relate the electrical properties of ZnO:Al films to their bonding structure and phase composition. It is found that Al-sites in an insulating metastable homologous (ZnO){sub 3}Al{sub 2}O{sub 3} phase are favored above a certain substrate temperature (T{sub S}) leading to deterioration of both the crystallinity and the electrical properties of the films. The higher film resistivity is associated with lower carrier mobility due to increased free electron scattering. Lower metal to oxygen flux ratios during deposition expand the range of T{sub S} at which low-resistivity films are obtained.

OSTI ID:
21347352
Journal Information:
Applied Physics Letters, Vol. 96, Issue 14; Other Information: DOI: 10.1063/1.3385024; (c) 2010 American Institute of Physics; ISSN 0003-6951
Country of Publication:
United States
Language:
English