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Title: Photoelectrochemical performances of n-CdS{sub 1-x}Se{sub x} thin films prepared by spray pyrolysis technique

Journal Article · · Solar Energy
;  [1]
  1. Thin Film Physics Laboratory, Department of Physics, Electronics and Photonics, Rajarshi Shahu Mahavidyalaya, Latur-413 512, Maharashtra (India)

The CdS{sub 1-x}Se{sub x} (0.0 {<=} x {<=} 1.0) thin films of various compositions have been deposited onto the amorphous and FTO coated glass substrates using a spray pyrolysis technique. An electrode/electrolyte interface has been formed between an n-type CdS{sub 1-x}Se{sub x} (0.0 {<=} x {<=} 1.0) alloyed/mixed type semiconductor and a sulphide/polysulphide redox electrolyte and investigated through the current-voltage, capacitance-voltage and photovoltaic power output characteristics. The dependence of the dark current through the junction and the junction capacitance on the voltage across the junction have been examined and analysed. Upon illumination of the interface with a light of 20 mW/cm{sup 2}, an open-circuit voltage of the order of 335 mV and a short-circuit current of 1.02 mA/cm{sup 2} have been developed (for x = 0.8), which results in energy conversion efficiency and fill factor 0.79% and 0.46% respectively. The magnitudes of the barrier heights at the interfaces have been determined. The significant electrochemical properties have been observed for a cell with electrode composition x = 0.8. (author)

OSTI ID:
21337888
Journal Information:
Solar Energy, Vol. 84, Issue 8; Other Information: Elsevier Ltd. All rights reserved; ISSN 0038-092X
Country of Publication:
United States
Language:
English