An oleic acid-capped CdSe quantum-dot sensitized solar cell

Journal Article · Mon Apr 13 00:00:00 EDT 2009 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3117221· OSTI ID:21313622

Jing, Chen ^[1]; Song, J L; Deng, W Q ^[2]; Sun, X W ^[3]; Jiang, C Y ^[4]; Lei, W ^[1]; Huang, J H; Liu, R S ^[5]

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1. School of Electronic Science and Engineering, Southeast University, Nanjing 210096 (China)
2. Division of Chemistry and Biological Chemistry, School of Physical and Mathematical Science, Nanyang Technological University, Singapore 637616 (Singapore)
3. School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore)
4. Institute of Microelectronics, 11 Science Park Road, Science Park II, Singapore 117685 (Singapore)
5. Department of Chemistry, National Taiwan University, Taipei 106, Taiwan (China)

In this letter, we report an oleic acid (OA)-capped CdSe quantum-dot sensitized solar cell (QDSSC) with an improved performance. The TiO{sub 2}/OA-CdSe photoanode in a two-electrode device exhibited a photon-to-current conversion efficiency of 17.5% at 400 nm. At AM1.5G irradiation with 100 mW/cm{sup 2} light intensity, the QDSSCs based on OA-capped CdSe showed a power conversion efficiency of about 1%. The function of OA was to increase QD loading, extend the absorption range and possibly suppress the surface recombination.

• OSTI ID: 21313622
• Journal Information: Applied Physics Letters, Vol. 94, Issue 15; Other Information: DOI: 10.1063/1.3117221; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABSORPTION
CADMIUM SELENIDES
ELECTRODES
OLEIC ACID
PHOTONS
QUANTUM DOTS
RECOMBINATION
SEMICONDUCTOR MATERIALS
SOLAR CELLS
TITANIUM OXIDES