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Title: Temperature dependence of Cu{sub 2}ZnSn(Se{sub x}S{sub 1-x}){sub 4} monograin solar cells

Journal Article · · Solar Energy
; ; ;  [1]
  1. Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn (Estonia)

The temperature dependence of open-circuit voltage (V{sub oc}), short-circuit current (I{sub sc}), fill factor (FF), and relative efficiency of monograin Cu{sub 2}ZnSn(Se{sub x}S{sub 1-x}){sub 4} solar cell was measured. The light intensity was varied from 2.2 to 100 mW/cm{sup 2} and temperatures were in the range of T = 175-300 K. With a light intensity of 100 mW/cm{sup 2}dV{sub oc}/dT was determined to be -1.91 mV/K and the dominating recombination process at temperatures close to room temperature was found to be related to the recombination in the space-charge region. The solar cell relative efficiency decreases with temperature by 0.013%/K. Our results show that the diode ideality factor n does not show remarkable temperature dependence and slightly increases from n = 1.85 to n = 2.05 in the temperature range between 175 and 300 K. (author)

OSTI ID:
21305688
Journal Information:
Solar Energy, Vol. 84, Issue 3; Other Information: Elsevier Ltd. All rights reserved; ISSN 0038-092X
Country of Publication:
United States
Language:
English