Mg doping and its effect on the semipolar GaN(1122) growth kinetics
Abstract
We report the effect of Mg doping on the growth kinetics of semipolar GaN(1122) synthesized by plasma-assisted molecular-beam epitaxy. Mg tends to segregate on the surface, inhibiting the formation of the self-regulated Ga film which is used as a surfactant for the growth of undoped and Si-doped GaN(1122). We observe an enhancement of Mg incorporation in GaN(1122) compared to GaN(0001). Typical structural defects or polarity inversion domains found in Mg-doped GaN(0001) were not observed for the semipolar films investigated in the present study.
- Authors:
-
- Equipe mixte CEA-CNRS 'Nanophysique et Semiconducteurs', CEA-Grenoble, INAC/SP2M/NPSC, 17 rue des Martyrs, 38054 Grenoble (France)
- Institut NEEL, CNRS and Universite Joseph Fourier, BP166, 38042 Grenoble Cedex 9 (France)
- CIMAP, UMR6252, CNRS-ENSICAEN-CEA-UCBN, 6 Boulevard du Marechal Juin, 14050 Caen (France)
- I. Physikalisches Institut, Justus-Liebig-Universitaet Giessen, 35392 Giessen (Germany)
- Publication Date:
- OSTI Identifier:
- 21294376
- Resource Type:
- Journal Article
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 95; Journal Issue: 17; Other Information: DOI: 10.1063/1.3256189; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; CRYSTAL GROWTH; DOPED MATERIALS; GALLIUM NITRIDES; MAGNESIUM; MOLECULAR BEAM EPITAXY; SEGREGATION; SEMICONDUCTOR MATERIALS; SURFACTANTS; THIN FILMS
Citation Formats
Lahourcade, L, Wirthmueller, A, Monroy, E, Pernot, J, Chauvat, M P, Ruterana, P, Laufer, A, and Eickhoff, M. Mg doping and its effect on the semipolar GaN(1122) growth kinetics. United States: N. p., 2009.
Web. doi:10.1063/1.3256189.
Lahourcade, L, Wirthmueller, A, Monroy, E, Pernot, J, Chauvat, M P, Ruterana, P, Laufer, A, & Eickhoff, M. Mg doping and its effect on the semipolar GaN(1122) growth kinetics. United States. https://doi.org/10.1063/1.3256189
Lahourcade, L, Wirthmueller, A, Monroy, E, Pernot, J, Chauvat, M P, Ruterana, P, Laufer, A, and Eickhoff, M. 2009.
"Mg doping and its effect on the semipolar GaN(1122) growth kinetics". United States. https://doi.org/10.1063/1.3256189.
@article{osti_21294376,
title = {Mg doping and its effect on the semipolar GaN(1122) growth kinetics},
author = {Lahourcade, L and Wirthmueller, A and Monroy, E and Pernot, J and Chauvat, M P and Ruterana, P and Laufer, A and Eickhoff, M},
abstractNote = {We report the effect of Mg doping on the growth kinetics of semipolar GaN(1122) synthesized by plasma-assisted molecular-beam epitaxy. Mg tends to segregate on the surface, inhibiting the formation of the self-regulated Ga film which is used as a surfactant for the growth of undoped and Si-doped GaN(1122). We observe an enhancement of Mg incorporation in GaN(1122) compared to GaN(0001). Typical structural defects or polarity inversion domains found in Mg-doped GaN(0001) were not observed for the semipolar films investigated in the present study.},
doi = {10.1063/1.3256189},
url = {https://www.osti.gov/biblio/21294376},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 17,
volume = 95,
place = {United States},
year = {Mon Oct 26 00:00:00 EDT 2009},
month = {Mon Oct 26 00:00:00 EDT 2009}
}
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