skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Mg doping and its effect on the semipolar GaN(1122) growth kinetics

Abstract

We report the effect of Mg doping on the growth kinetics of semipolar GaN(1122) synthesized by plasma-assisted molecular-beam epitaxy. Mg tends to segregate on the surface, inhibiting the formation of the self-regulated Ga film which is used as a surfactant for the growth of undoped and Si-doped GaN(1122). We observe an enhancement of Mg incorporation in GaN(1122) compared to GaN(0001). Typical structural defects or polarity inversion domains found in Mg-doped GaN(0001) were not observed for the semipolar films investigated in the present study.

Authors:
; ;  [1];  [2]; ;  [3]; ;  [4]
  1. Equipe mixte CEA-CNRS 'Nanophysique et Semiconducteurs', CEA-Grenoble, INAC/SP2M/NPSC, 17 rue des Martyrs, 38054 Grenoble (France)
  2. Institut NEEL, CNRS and Universite Joseph Fourier, BP166, 38042 Grenoble Cedex 9 (France)
  3. CIMAP, UMR6252, CNRS-ENSICAEN-CEA-UCBN, 6 Boulevard du Marechal Juin, 14050 Caen (France)
  4. I. Physikalisches Institut, Justus-Liebig-Universitaet Giessen, 35392 Giessen (Germany)
Publication Date:
OSTI Identifier:
21294376
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 95; Journal Issue: 17; Other Information: DOI: 10.1063/1.3256189; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CRYSTAL GROWTH; DOPED MATERIALS; GALLIUM NITRIDES; MAGNESIUM; MOLECULAR BEAM EPITAXY; SEGREGATION; SEMICONDUCTOR MATERIALS; SURFACTANTS; THIN FILMS

Citation Formats

Lahourcade, L, Wirthmueller, A, Monroy, E, Pernot, J, Chauvat, M P, Ruterana, P, Laufer, A, and Eickhoff, M. Mg doping and its effect on the semipolar GaN(1122) growth kinetics. United States: N. p., 2009. Web. doi:10.1063/1.3256189.
Lahourcade, L, Wirthmueller, A, Monroy, E, Pernot, J, Chauvat, M P, Ruterana, P, Laufer, A, & Eickhoff, M. Mg doping and its effect on the semipolar GaN(1122) growth kinetics. United States. https://doi.org/10.1063/1.3256189
Lahourcade, L, Wirthmueller, A, Monroy, E, Pernot, J, Chauvat, M P, Ruterana, P, Laufer, A, and Eickhoff, M. 2009. "Mg doping and its effect on the semipolar GaN(1122) growth kinetics". United States. https://doi.org/10.1063/1.3256189.
@article{osti_21294376,
title = {Mg doping and its effect on the semipolar GaN(1122) growth kinetics},
author = {Lahourcade, L and Wirthmueller, A and Monroy, E and Pernot, J and Chauvat, M P and Ruterana, P and Laufer, A and Eickhoff, M},
abstractNote = {We report the effect of Mg doping on the growth kinetics of semipolar GaN(1122) synthesized by plasma-assisted molecular-beam epitaxy. Mg tends to segregate on the surface, inhibiting the formation of the self-regulated Ga film which is used as a surfactant for the growth of undoped and Si-doped GaN(1122). We observe an enhancement of Mg incorporation in GaN(1122) compared to GaN(0001). Typical structural defects or polarity inversion domains found in Mg-doped GaN(0001) were not observed for the semipolar films investigated in the present study.},
doi = {10.1063/1.3256189},
url = {https://www.osti.gov/biblio/21294376}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 17,
volume = 95,
place = {United States},
year = {Mon Oct 26 00:00:00 EDT 2009},
month = {Mon Oct 26 00:00:00 EDT 2009}
}