A low-temperature method for improving the performance of sputter-deposited ZnO thin-film transistors with supercritical fluid

Journal Article · Mon Apr 20 00:00:00 EDT 2009 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3124658· OSTI ID:21294047

Minchen, Chen; Shengyao, Huang; Shihching, Chen ^[1]; Tingchang, Chang ^[1]; Kuanchang, Chang ^[2]; Hungwei, Li ^[3]; Jin, Lu ^[1]; Yi, Shi ^[4]

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1. Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China)
2. Department of Mechanical and Electro-Mechanical Engineering, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China)
3. Department of Photonics and Display Institute, National Chiao Tung University, Hsin-Chu 300, Taiwan (China)
4. Department of Physics, Nanjing University, Nanjing 210093 (China) and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093 (China)

A low-temperature method, supercritical CO{sub 2} (SCCO{sub 2}) fluid technology, is employed to improve the device properties of ZnO TFT at 150 deg. C. In this work, the undoped ZnO films were deposited by sputter at room temperature and treated by SCCO{sub 2} fluid which is mixed with 5 ml pure H{sub 2}O. After SCCO{sub 2} treatment, the on/off current ratios and threshold voltage of the device were improved significantly. From x-ray photoelectron spectroscopy analyses, the enhancements were attributed to the stronger Zn-O bonds, the hydrogen-related donors, and the reduction in dangling bonds at the grain boundary by OH passivation.

• OSTI ID: 21294047
• Journal Information: Applied Physics Letters, Vol. 94, Issue 16; Other Information: DOI: 10.1063/1.3124658; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHEMICAL BONDS
DEPOSITION
ELECTRIC POTENTIAL
GRAIN BOUNDARIES
HYDROGEN
PASSIVATION
SEMICONDUCTOR MATERIALS
SPUTTERING
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0273-0400 K
TEMPERATURE RANGE 0400-1000 K
THIN FILMS
TRANSISTORS
X-RAY PHOTOELECTRON SPECTROSCOPY
ZINC OXIDES