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Title: Stress and Defect Control in GaN Using Low Temperature Interlayers

In organometallic vapor phase epitaxial growth of Gail on sapphire, the role of the low- temperature-deposited interlayers inserted between high-temperature-grown GaN layers was investigated by in situ stress measurement, X-ray diffraction, and transmission electron microscopy. Insertion of a series of low temperature GaN interlayers reduces the density of threading dislocations while simultaneously increasing the tensile stress during growth, ultimately resulting in cracking of the GaN film. Low temperature AIN interlayers were found to be effective in suppressing cracking by reducing tensile stress. The intedayer approach permits tailoring of the film stress to optimize film structure and properties.
Authors:
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Publication Date:
OSTI Identifier:
2129
Report Number(s):
SAND98-2722J
ON: DE00002129
DOE Contract Number:
AC04-94AL85000
Resource Type:
Journal Article
Resource Relation:
Journal Name: Japanese Journal of Applied Physics
Research Org:
Sandia National Laboratories, Albuquerque, NM, and Livermore, CA
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; Gallium Nitrides; Gallium Nitrides; Crystal Defects; Crystal Defects; Stresses; Stresses