Nature of Defects Induced by Au Implantation in Hexagonal Silicon Carbide Single Crystals
- CNRS, CEMHTI Site Cyclotron, 3A rue de la Ferollerie, 45071 Orleans (France)
- Universitaet der Bundeswehr Muenchen, Werner-Heisenberg-Weg 39, 85579 Neubiberg (Germany)
Pulsed-slow-positron-beam-based positron lifetime spectroscopy was used to investigate the nature of vacancy defects induced by 20 MeV Au implantation in single crystals 6H-SiC. Preliminary analysis of the data shows that at lower fluence, below 10{sup 14} cm{sup -2}, a positron lifetime of 220 ps has been obtained: it could be associated with the divacancy V{sub Si}-V{sub C} in comparison with the literature. At higher fluence, above 10{sup 15} cm{sup -2}, a positron lifetime of 260-270 ps, increasing with the incident positron energy, has been observed after decomposition of the lifetime spectra. By comparison with lifetime calculations, open-volumes such as quadrivacancy (V{sub Si}-V{sub C}){sub 2} clusters could be associated with this value.
- OSTI ID:
- 21289677
- Journal Information:
- AIP Conference Proceedings, Vol. 1099, Issue 1; Conference: CAARI 2008: 12. international conference on application of accelerators in research and industry, Fort Worth, TX (United States), 10-15 Aug 2008; Other Information: DOI: 10.1063/1.3120183; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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