Precise Fabrication of Silicon Wafers Using Gas Cluster Ion Beams
- Processing Technology, Silicon Business Group, Covalent Materials Corporation, 6-861-5 Higashikou Seirou-machi, Kitakanbaragun, Niigata 957-0197 (Japan)
- New Business Creation, Covalent Material Corporation, 30 Soya, Hadano City, Kanagawa 257-0031 (Japan)
- Graduate School of Engineering, University of Hyogo, 2167 Syosya, Himeji City, Hyogo 671-2280 (Japan)
Precise surface processing of a silicon wafer was studied by using a gas cluster ion beam (GCIB). The damage caused to the silicon surface was strongly dependent on irradiation parameters. The extent of damage varied with the species of source gas and the acceleration voltage (Va) of cluster ions. It also varied with the cluster size and residual gas pressure. The influence of electron acceleration voltage (Ve) used for ionization of a neutral cluster was also investigated. The irradiation damage, such as an amorphous silicon (a-Si) layer, a mixed layer of a-Si and c-Si (transition layer), and surface roughness, was increased with Ve. It is suggested that the increase in the amount of energy per atom was induced by high Ve, because of variation of the cluster size and/or cluster charge. An undamaged smooth surface can be produced by Ar-GCIB irradiation at low Ve and Va.
- OSTI ID:
- 21289550
- Journal Information:
- AIP Conference Proceedings, Vol. 1099, Issue 1; Conference: CAARI 2008: 12. international conference on application of accelerators in research and industry, Fort Worth, TX (United States), 10-15 Aug 2008; Other Information: DOI: 10.1063/1.3120051; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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