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Title: Change in Ion Beam Induced Current from Si Metal-Oxide-Semiconductor Capacitors after Gamma-Ray Irradiation

To investigate the effects of gamma-ray irradiation on transient current induced in MOS capacitors by heavy ion incidence, Si MOS capacitors were irradiated with gamma-rays up to 60.9 kGy(SiO2). The change in Transient Ion Beam Induced Current (TIBIC) signals due to gamma-ray irradiation was investigated using 15 MeV-oxygen ion microbeams. After gamma-ray irradiation, the peak current of the TIBIC signal vs. bias voltage curve shifted toward negative voltages. This shift can be interpreted in terms of the charge trapped in the oxide. In this dose range, no significant effects of the interface traps induced by gamma-ray irradiation on the TIBIC signals were observed.
Authors:
; ;  [1] ;  [2] ; ;  [3]
  1. Japan Atomic Energy Agency, 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan)
  2. College of Science and Technology, Nihon University, Funabashi (Japan)
  3. Sandia National Laboratories, PO Box 5800, MS 1056, Albuquerque, NM 87185 (United States)
Publication Date:
OSTI Identifier:
21289498
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1099; Journal Issue: 1; Conference: CAARI 2008: 12. international conference on application of accelerators in research and industry, Fort Worth, TX (United States), 10-15 Aug 2008; Other Information: DOI: 10.1063/1.3119985; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CAPACITORS; ELECTRIC CONDUCTIVITY; GAMMA RADIATION; INTERFACES; IRRADIATION; PHYSICAL RADIATION EFFECTS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; SILICON; TRANSIENTS