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Title: Electronic processes in uniaxially stressed p-type germanium

Effect of uniaxial stress on acceptor-related electronic processes in Ge single crystals doped with Ga, Be, and Cu were studied by Hall and photo-Hall effect measurements in conjunction with infrared spectroscopy. Stress dependence of hole lifetime in p-type Ge single crystals is used as a test for competing models of non-radiative capture of holes by acceptors. Photo-Hall effect shows that hole lifetime in Ga- and Be-doped Ge increases by over one order of magnitude with uniaxial stress at liq. He temps. Photo-Hall of Ge:Be shows a stress-induced change in the temperature dependence of hole lifetime. This is consistent with observed increase of responsivity of Ge:Ga detectors with uniaxial stress. Electronic properties of Ge:Cu are shown to change dramatically with uniaxial stress; the results provide a first explanation for the performance of uniaxially stressed, Cu-diffused Ge:Ga detectors which display a high conductivity in absence of photon signal and therefore have poor sensitivity.
Authors:
 [1]
  1. Univ. of California, Berkeley, CA (United States)
Publication Date:
OSTI Identifier:
212680
Report Number(s):
LBL--38287
ON: DE96008466
DOE Contract Number:
AC03-76SF00098
Resource Type:
Thesis/Dissertation
Resource Relation:
Other Information: TH: Thesis (Ph.D.); PBD: Feb 1996
Research Org:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; GERMANIUM; PHYSICAL PROPERTIES; HOLES; PHOTOCONDUCTIVITY; GE SEMICONDUCTOR DETECTORS; INFRARED RADIATION; LIFETIME; P-TYPE CONDUCTORS; DOPED MATERIALS; GALLIUM ADDITIONS; BERYLLIUM ADDITIONS; COPPER ADDITIONS; STRESSES