Specific features of recombination processes in CdTe films produced in different temperature conditions of growth and subsequent annealing
- National Academy of Sciences of Ukraine, Lashkarev Institute of Semiconductor Physics (Ukraine)
The steady-state and kinetic characteristics of photoconductivity and photoluminescence and the thermally stimulated conductivity spectra of the GdTe layers deposited by vacuum evaporation onto heated substrates are studied in relation to the substrate temperature. The measurements are carried out at temperatures, illuminations, and wavelengths ranging from 4.2 to 400 K, from 10{sup 10} to 10{sup 23} photon/cm{sup 2}, and from0.4 to 2.5 {mu}m, respectively. A certain optimal range of substrate temperatures T{sub s} {approx} 450-550 deg. C, at which the as-prepared layers exhibit a high resistivity, a high photosensitivity, and the best structural quality, is established. In the spectra of these layers, a new luminescence band at hv{sub m} = 1.09 eV is observed along with the known photoluminescence band at hv{sub m} = 1.42 eV. It is established that this new band is due to intracenter transitions rather than recombination transitions. The nature of radiative recombination centers in the layers is discussed. It is suggested that the d electrons of cations can be involved in the formation of chemical bonds of local centers in CdTe.
- OSTI ID:
- 21260313
- Journal Information:
- Semiconductors, Vol. 43, Issue 8; Other Information: DOI: 10.1134/S106378260908003X; Copyright (c) 2009 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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