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Title: The effects of the porous buffer layer and doping with dysprosium on internal stresses in the GaInP:Dy/por-GaAs/GaAs(100) heterostructures

Abstract

In structures with a porous buffer layer, residual internal stresses caused by a mismatch between the crystal-lattice parameters of the epitaxial GaInP alloy and the GaAs substrate are redistributed to the porous layer that acts as a buffer and is conducive to disappearance of internal stresses. Doping of the epitaxial layer with dysprosium exerts a similar effect on the internal stresses in the film-substrate structure.

Authors:
; ; ; ;  [1];  [2]
  1. Voronezh State Technical University (Russian Federation)
  2. Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)
Publication Date:
OSTI Identifier:
21260299
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 43; Journal Issue: 8; Other Information: DOI: 10.1134/S1063782609080247; Copyright (c) 2009 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CRYSTAL LATTICES; DYSPROSIUM; EPITAXY; FILMS; GALLIUM ALLOYS; GALLIUM ARSENIDES; INDIUM ALLOYS; LAYERS; PHOSPHORUS ADDITIONS; POROUS MATERIALS; RESIDUAL STRESSES

Citation Formats

Seredin, P V, Gordienko, N N, Glotov, A V, Zhurbina, I A, Domashevskaya, E P, Arsent'ev, I. N., E-mail: arsentyev@mail.ioffe.ru, and Shishkov, M V. The effects of the porous buffer layer and doping with dysprosium on internal stresses in the GaInP:Dy/por-GaAs/GaAs(100) heterostructures. United States: N. p., 2009. Web. doi:10.1134/S1063782609080247.
Seredin, P V, Gordienko, N N, Glotov, A V, Zhurbina, I A, Domashevskaya, E P, Arsent'ev, I. N., E-mail: arsentyev@mail.ioffe.ru, & Shishkov, M V. The effects of the porous buffer layer and doping with dysprosium on internal stresses in the GaInP:Dy/por-GaAs/GaAs(100) heterostructures. United States. https://doi.org/10.1134/S1063782609080247
Seredin, P V, Gordienko, N N, Glotov, A V, Zhurbina, I A, Domashevskaya, E P, Arsent'ev, I. N., E-mail: arsentyev@mail.ioffe.ru, and Shishkov, M V. 2009. "The effects of the porous buffer layer and doping with dysprosium on internal stresses in the GaInP:Dy/por-GaAs/GaAs(100) heterostructures". United States. https://doi.org/10.1134/S1063782609080247.
@article{osti_21260299,
title = {The effects of the porous buffer layer and doping with dysprosium on internal stresses in the GaInP:Dy/por-GaAs/GaAs(100) heterostructures},
author = {Seredin, P V and Gordienko, N N and Glotov, A V and Zhurbina, I A and Domashevskaya, E P and Arsent'ev, I. N., E-mail: arsentyev@mail.ioffe.ru and Shishkov, M V},
abstractNote = {In structures with a porous buffer layer, residual internal stresses caused by a mismatch between the crystal-lattice parameters of the epitaxial GaInP alloy and the GaAs substrate are redistributed to the porous layer that acts as a buffer and is conducive to disappearance of internal stresses. Doping of the epitaxial layer with dysprosium exerts a similar effect on the internal stresses in the film-substrate structure.},
doi = {10.1134/S1063782609080247},
url = {https://www.osti.gov/biblio/21260299}, journal = {Semiconductors},
issn = {1063-7826},
number = 8,
volume = 43,
place = {United States},
year = {Sat Aug 15 00:00:00 EDT 2009},
month = {Sat Aug 15 00:00:00 EDT 2009}
}