Diffusion of implanted sodium in oxygen-containing silicon
- Southern Federal University, Research Institute of Physics (Russian Federation)
- Helsinki University of Technology, Micro and Nanofabrication Centre (Finland)
The effect of oxygen on diffusion of sodium implanted into silicon is studied for the first time in the temperature range from 500 to 850{sup o}C. A high-resistivity p-Si ({rho} > 1 k{omega} cm) grown by the Czochralski method in a magnetic field (mCz) with the oxygen concentration {approx}3 x 10{sup 17} cm{sup -3} was used. For comparison, we used silicon grown by the crucibleless floating zone method (fz). Temperature dependences of the effective diffusion coefficient of sodium in the mCz-Si and fz-Si crystals were determined and written as D{sub mCz}[cm{sup 2}/s] = 1.12exp(-1.64 eV/kT) cm{sup 2}/s and D{sub fz}[cm{sup 2}/s] = 0.024exp(-1.29 eV/kT) cm{sup 2}/s, respectively. It is assumed that larger values of diffusion parameters in oxygen-containing silicon are caused by formation of complex aggregates that contain sodium and oxygen atoms.
- OSTI ID:
- 21255610
- Journal Information:
- Semiconductors, Vol. 42, Issue 9; Other Information: DOI: 10.1134/S1063782608090212; Copyright (c) 2008 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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