Atomic Oxygen Sensors Based on Nanograin ZnO Films Prepared by Pulse Laser Deposition
- National Key Laboratory of Vacuum and Cryogenics Technology and Physics, Lanzhou Institute of Physics, Lanzhou 730000 (China)
High-quality nanograin ZnO thin films were deposited on c-plane sapphire (Al{sub 2}O{sub 3}) substrates by pulse laser deposition (PLD). Scanning electron microscopy (SEM) and x-ray diffraction (XRD) were used to characterize the samples. The structural and morphological properties of ZnO films under different deposition temperature have been investigated before and after atomic oxygen (AO) treatment. XRD has shown that the intensity of the (0 0 2) peak increases and its FWHM value decreases after AO treatment. The AO sensing characteristics of nano ZnO film also has been investigated in a ground-based atomic oxygen simulation facility. The results show that the electrical conductivity of nanograin ZnO films decreases with increasing AO fluence and that the conductivity of the films can be recovered by heating.
- OSTI ID:
- 21255382
- Journal Information:
- AIP Conference Proceedings, Vol. 1087, Issue 1; Conference: 9. international conference on protection of materials and structures from space environment, Toronto, Ontario (Canada), 20-23 May 2008; Other Information: DOI: 10.1063/1.3076858; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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