Simulation of Si:P spin-based quantum computer architecture
- Research Center for Applied Sciences, Academia Sinica, Nankang, Taipei, 11529 (Taiwan) and Department of Physics, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States)
- Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong (China)
We present realistic simulation for single and double phosphorous donors in a silicon-based quantum computer design by solving a valley-orbit coupled effective-mass equation for describing phosphorous donors in strained silicon quantum well (QW). Using a generalized unrestricted Hartree-Fock method, we solve the two-electron effective-mass equation with quantum well confinement and realistic gate potentials. The effects of QW width, gate voltages, donor separation, and donor position shift on the lowest singlet and triplet energies and their charge distributions for a neighboring donor pair in the quantum computer(QC) architecture are analyzed. The gate tunability are defined and evaluated for a typical QC design. Estimates are obtained for the duration of spin half-swap gate operation.
- OSTI ID:
- 21254859
- Journal Information:
- AIP Conference Proceedings, Vol. 1074, Issue 1; Conference: 2. international workshop on solid-state quantum computing and mini-school on quantum information science, Taipei, Taiwan (China), 23-27 Jun 2008; Other Information: DOI: 10.1063/1.3037134; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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