The Effect of the Dose and Energy of a Pre-Silicide Implant on Nickel Silicide Formation

Journal Article · Mon Nov 03 00:00:00 EST 2008 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3033675· OSTI ID:21251716

Rice, Jeffrey H ^[1]

---

1. Fairchild Semiconductor, West Jordan, UT (United States)

Pre-silicide implants have been used to increase the thermal stability of nickel silicide (NiSi) and to improve device performance. This study evaluates the effect of the dose, energy and species of a pre-silicide ion implant on NiSi phase formation. The resulting silicide was evaluated using sheet resistance, scanning electron Microscope (SEM) cross-sections, and Rutherford Backscattering Spectroscopy (RBS) analysis. It was found that a high dose argon implant will completely inhibit the silicide formation.

• OSTI ID: 21251716
• Journal Information: AIP Conference Proceedings, Vol. 1066, Issue 1; Conference: 17. international conference on ion implantation technology, Monterey, CA (United States), 8-13 Jun 2008; Other Information: DOI: 10.1063/1.3033675; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ARGON
CROSS SECTIONS
ION IMPLANTATION
MASS SPECTROSCOPY
NICKEL SILICIDES
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SCANNING ELECTRON MICROSCOPY