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Title: Angular Distributions of Sputtered Atoms from Semiconductor Targets at Grazing Ion Beam Incidence Angles

Angular distributions of ion sputtered germanium and silicon atoms are investigated within this work. Experiments are performed for the case of grazing ion incidence angles, where the resulting angular distributions are asymmetrical with respect to the polar angle of the sputtered atoms. The performed experiments are compared to Monte-Carlo simulations from different programs. We show here an improved model for the angular distribution, which has an additional dependence of the ion incidence angle.
Authors:
 [1] ; ;  [2] ;  [3] ;  [1] ;  [4]
  1. Lehrstuhl fuer Elektronische Bauelemente, Cauerstrasse 6, 91058 Erlangen (Germany)
  2. Fraunhofer Institut fuer Integrierte Systeme und Bauelementetechnologie (IISB), Schottkystrasse 10, 91058 Erlangen (Germany)
  3. Departamento Electricidad y Eletronica, Universidad de Valladolid, 47011 Valladolid (Spain)
  4. (IISB), Schottkystrasse 10, 91058 Erlangen (Germany)
Publication Date:
OSTI Identifier:
21251661
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1066; Journal Issue: 1; Conference: 17. international conference on ion implantation technology, Monterey, CA (United States), 8-13 Jun 2008; Other Information: DOI: 10.1063/1.3033602; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANGULAR DISTRIBUTION; ATOMS; COMPUTERIZED SIMULATION; GERMANATES; GERMANIUM; GLASS; INCIDENCE ANGLE; ION BEAMS; ION IMPLANTATION; MONTE CARLO METHOD; SEMICONDUCTOR MATERIALS; SILICON; SPUTTERING