Carrier Density Profiling of Ultra-Shallow Junction Layers Through Corrected C-V Plotting

Journal Article · Mon Nov 03 00:00:00 EST 2008 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3033588· OSTI ID:21251654

Chen, James; Dimitrov, Dimitar; Dimitrova, Tatiana ^[1]; Timans, Paul ^[2]; Gelpey, Jeff; McCoy, Steve ^[3]; Lerch, Wilfried; Paul, Silke ^[4]; Bolze, Detlef ^[5]

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1. Four Dimensions, Inc., 3140 Diablo Ave, Hayward, California, 94545 (United States)
2. Mattson Technology, Inc. Fremont, California (United States)
3. Mattson Technology Canada, Inc., Vancouver (Canada)
4. Mattson Thermal Products GmbH, Dornstadt (Germany)
5. IHP, Frankfurt (Oder) (Germany)

The aim of this report is to present and justify a new approach for carrier density profiling in ultra-shallow junction (USJ) layer. This new approach is based on a capacitance measurement model, which takes series impedance, shunt resistance and the presence of a boron skin on the USJ layer into account. It allows us to extract the depletion layer capacitances in the USJ layer from C-V plotting more accurately and hence to obtain better carrier density profiles. Based on this new approach the carrier density profiles of different USJ layers with and without halo-style implants are obtained and discussed.

• OSTI ID: 21251654
• Journal Information: AIP Conference Proceedings, Vol. 1066, Issue 1; Conference: 17. international conference on ion implantation technology, Monterey, CA (United States), 8-13 Jun 2008; Other Information: DOI: 10.1063/1.3033588; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BORON
CAPACITANCE
CARRIER DENSITY
DEPLETION LAYER
IMPEDANCE
ION IMPLANTATION
SEMICONDUCTOR DEVICES