Key Technologies for Ultra High Dose CMOS Applications

Journal Article · Mon Nov 03 00:00:00 EST 2008 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3033574· OSTI ID:21251646

Jeon, Y; Koo, I; Singh, V ^[1]; Oh, J; Jin, S; Lee, J; Rouh, K; Ju, M; Jeon, S; Ku, J ^[2]; Lee, S B; Lee, S W; Ok, M T ^[3]; Butterbaugh, J; Lee, A; Kim, K ^[4]; Lee, S W; Ju, K J; Park, J W ^[5]

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1. Varian Semiconductor Equipment Associates, Inc., 35 Dory Road, Gloucester, MA 01930 (United States)
2. Hynix Semiconductor, Inc., Ichon-si, Kyoungki-do, 467-701 (Korea, Republic of)
3. Nanometrics, Inc., Milpitas, CA 95035 (United States)
4. FSI International, Inc., Chaska, MN 55318 (United States)
5. Varian Korea Ltd., Pyeongtaek-si Kyoungki-do 459-040 (Korea, Republic of)

The trend towards shrinking advanced microelectronic Logic and DRAM devices will require ultra high dose implantation. One ultra high dose application in DRAM, being rapidly adopted in production is Dual Poly Gate (DPG). Three main challenges existed for the adoption of this high dose dual poly gate (DPG) doping applications: monitoring of high dose implantation, photoresist stripping and maintaining high throughput. In this paper we present how these challenges have been addressed. VSEA's plasma doping (PLAD) tool offers several unique advantages for DPG applications. When compared to conventional or molecular beam line implanters or other immersion techniques, PLAD delivers 3 to 7 times higher throughput (compared to traditional ion implanter) without dopant penetration through the thin doped polysilicon layer into the gate oxide. It also improves P{sup +} poly silicon DPG device properties at superior throughput. In this work we demonstrate how hot spray photoresist strip processing eliminates the need for multiple-tools required for wet+ash+wet process. In addition to PLAD's patented in-situ dose control metrology we also demonstrate an ex-situ high dose implantation metrology using spectroscopic ellipsometer (SE) and spectroscopic reflectometer (SR). The technique shows good correlation (R{sup 2}{approx}0.99) between implant dose and damaged layer thickness.

• OSTI ID: 21251646
• Journal Information: AIP Conference Proceedings, Vol. 1066, Issue 1; Conference: 17. international conference on ion implantation technology, Monterey, CA (United States), 8-13 Jun 2008; Other Information: DOI: 10.1063/1.3033574; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ASHES
CURIUM OXIDES
DOPED MATERIALS
ELLIPSOMETERS
INTEGRATED CIRCUITS
ION IMPLANTATION
LAYERS
MOLECULAR BEAMS
SILICON