Diffusion of electrons scattered by short-range impurities in a quantizing magnetic field
- Moscow Engineering Physics Institute (State University) (Russian Federation)
Formulas for transverse diffusion and conductivity in a semiconductor are obtained for electrons scattered by neutral impurities in a quantizing magnetic field. The formulas are valid for an impurity potential of arbitrary depth. Based on Kubo's theory, calculations are performed using electron wavefunctions of the problem of single-impurity scattering in a magnetic field. The poles of the scattering amplitude correctly determine electron eigenstates and magnetic impurity states. As a result, an exact expression is found for the dependence of transverse diffusion coefficient D{sub perpendicular} on longitudinal electron energy {epsilon} due to scattering by short-range (neutral) impurities. The behavior of D{sub perpendicular} ({epsilon}) is examined over an interval of magnetic field strength for several values of impurity potential depth. The experimental observability of diffusion and conductivity using IR lasers is discussed.
- OSTI ID:
- 21242026
- Journal Information:
- Journal of Experimental and Theoretical Physics, Vol. 106, Issue 4; Other Information: DOI: 10.1134/S1063776108040183; Copyright (c) 2008 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7761
- Country of Publication:
- United States
- Language:
- English
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