Carbonitriding of silicon using plasma focus device

Journal Article · Sun Mar 15 00:00:00 EDT 2009 · Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films

DOI:https://doi.org/10.1116/1.3085720· OSTI ID:21195012

Jabbar, S; Khan, I A; Ahmad, R; Zakaullah, M; Pan, J S ^[1]

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1. Department of Physics, GC University, 54000 Lahore (Pakistan)

Carbonitride thin films have been deposited on silicon substrate by the irradiation of energetic nitrogen ions emanated from dense plasma focus device. The carbon ions are ablated by the irradiation of relativistic electrons from the insert material (graphite) placed at the anode tip. The x-ray diffraction analysis demonstrates that a polycrystalline thin film consisting of various compounds such as Si{sub 3}N{sub 4}, SiC, and C{sub 3}N{sub 4} is formed on the silicon (100) substrate. Crystallinity of different compounds decreases with the increase in angular positions (0 deg., 10 deg., and 20 deg. ). Raman spectroscopy shows the appearance of graphitic and disordered bands with silicon nitride and silicon carbide indicating the formation of carbonitride. Raman spectra also indicate that broadening of bands increases with the increase in focus deposition shots, leading to the amorphization of the thin film. The amorphization of the thin films depends on the ion energy flux as well as on the sample angular position. The scanning electron microscopy exhibits the damaging of the substrate surface at 0 deg. angular position. The microstructure shows the tubular shape for higher ion dose (40 focus shots). At 10 deg. angular position, a two phase phenomenon is observed with the ordered phase in the solid solution. A smooth and uniform surface morphology showing a small cluster is observed for the 20 deg. angular position.

• OSTI ID: 21195012
• Journal Information: Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films, Vol. 27, Issue 2; Other Information: DOI: 10.1116/1.3085720; (c) 2009 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1553-1813
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AMORPHOUS STATE
CARBON IONS
CARBON NITRIDES
CARBONITRIDES
ELECTRONS
GRAPHITE
ION BEAMS
MICROSTRUCTURE
NITROGEN IONS
PLASMA FOCUS DEVICES
RAMAN SPECTRA
RAMAN SPECTROSCOPY
SCANNING ELECTRON MICROSCOPY
SEMICONDUCTOR MATERIALS
SILICON CARBIDES
SILICON NITRIDES
SUBSTRATES
SURFACES
THIN FILMS
X-RAY DIFFRACTION