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Title: Self-assembled GaN hexagonal micropyramid and microdisk

The self-assembled GaN hexagonal micropyramid and microdisk were grown on LiAlO{sub 2} by plasma-assisted molecular-beam epitaxy. It was found that the (0001) disk was established with the capture of N atoms by most-outside Ga atoms as the (1x1) surface was constructing, while the pyramid was obtained due to the missing of most-outside N atoms. The intensity of cathode luminescence excited from the microdisk was one order of amplitude greater than that from M-plane GaN.
Authors:
; ; ; ;  [1]
  1. Department of Physics, Department of Materials and Optoelectronic Science, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan (China)
Publication Date:
OSTI Identifier:
21175956
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 94; Journal Issue: 6; Other Information: DOI: 10.1063/1.3079078; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CATHODES; CATHODOLUMINESCENCE; CRYSTAL GROWTH; GALLIUM NITRIDES; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR MATERIALS